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FQD1N60C Datasheet(PDF) 2 Page - Kersemi Electronic Co., Ltd.

Part # FQD1N60C
Description  600V N-Channel MOSFET
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Manufacturer  KERSEMI [Kersemi Electronic Co., Ltd.]
Direct Link  http://www.kersemi.com
Logo KERSEMI - Kersemi Electronic Co., Ltd.

FQD1N60C Datasheet(HTML) 2 Page - Kersemi Electronic Co., Ltd.

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Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 59 mH, IAS = 1.1 A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
3. ISD ≤ 1.1 A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse width
≤ 300µs, Duty cycle ≤ 2%
5. Essentially independent of operating temperature
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
VGS = 0 V, ID = 250 µA
600
--
--
V
∆BV
DSS
/
∆T
J
Breakdown Voltage Temperature
Coefficient
ID = 250 µA, Referenced to 25°C
--
0.6
--
V/°C
IDSS
Zero Gate Voltage Drain Current
VDS = 600 V, VGS = 0 V
--
--
1
µA
VDS = 480 V, TC = 125°C
--
--
10
µA
IGSSF
Gate-Body Leakage Current, Forward
VGS = 30 V, VDS = 0 V
--
--
100
nA
IGSSR
Gate-Body Leakage Current, Reverse
VGS = -30 V, VDS = 0 V
--
--
-100
nA
On Characteristics
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 250 µA
2.0
--
4.0
V
RDS(on)
Static Drain-Source
On-Resistance
VGS = 10 V, ID =
0.5 A
--
9.3
11.5
gFS
Forward Transconductance
VDS = 40 V, ID =
0.5 A
(Note 4)
--
0.75
--
S
Dynamic Characteristics
Ciss
Input Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
--
130
170
pF
Coss
Output Capacitance
--
19
25
pF
Crss
Reverse Transfer Capacitance
--
3.5
4.5
pF
Switching Characteristics
td(on)
Turn-On Delay Time
VDD = 300 V, ID = 1.1 A,
RG = 25 Ω
(Note 4, 5)
--
7
24
ns
tr
Turn-On Rise Time
--
21
52
ns
td(off)
Turn-Off Delay Time
--
13
36
ns
tf
Turn-Off Fall Time
--
27
64
ns
Qg
Total Gate Charge
VDS = 480 V, ID = 1.1 A,
VGS = 10 V
(Note 4, 5)
--
4.8
6.2
nC
Qgs
Gate-Source Charge
--
0.7
--
nC
Qgd
Gate-Drain Charge
--
2.7
--
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
--
--
1
A
ISM
Maximum Pulsed Drain-Source Diode Forward Current
--
--
4
A
VSD
Drain-Source Diode Forward Voltage
VGS = 0 V, IS = 0.5 A
--
--
1.4
V
trr
Reverse Recovery Time
VGS = 0 V, IS = 1.1 A,
dIF / dt = 100 A/µs
(Note 4)
--
190
--
ns
Qrr
Reverse Recovery Charge
--
0.53
--
µC


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