NTD78N0335G datasheet(2/7 Pages) ONSEMI

Part #	NTD78N0335G

Description	Power MOSFET 25 V, 78 A, Single N?묬hannel, DPAK

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NTD78N03

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ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)

Parameter

Symbol

Test Condition

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage

V(BR)DSS

VGS = 0 V, ID = 250 mA

25

V

Drain−to−Source Breakdown Voltage

Temperature Coefficient

V(BR)DSS/TJ

24

mV/

°C

Zero Gate Voltage Drain Current

IDSS

VGS = 0 V,

VDS = 20 V

TJ = 25°C

1.5

mA

TJ = 125°C

10

Gate−to−Source Leakage Current

IGSS

VDS = 0 V, VGS = "20 V

"100

nA

ON CHARACTERISTICS (Note 3)

Gate Threshold Voltage

VGS(TH)

VGS = VDS, ID = 250 mA

1.0

1.6

3.0

V

Negative Threshold Temperature Coefficient

VGS(TH)/TJ

−5.0

mV/

°C

Drain−to−Source On Resistance

RDS(on)

VGS = 10 V, ID = 78 A

4.6

6.0

m

W

VGS = 4.5 V, ID = 36 A

6.5

7.8

Forward Transconductance

gFS

VDS = 10 V, ID = 15 A

22

S

CHARGES, CAPACITANCES AND GATE RESISTANCE

Input Capacitance

Ciss

VGS = 0 V, f = 1.0 MHz,

VDS = 12 V

1920

2250

pF

Output Capacitance

Coss

960

Reverse Transfer Capacitance

Crss

420

Total Gate Charge

QG(TOT)

VGS = 4.5 V, VDS = 20 V,

ID = 20 A

25.5

35

nC

Threshold Gate Charge

QG(TH)

2.4

Gate−to−Source Charge

QGS

5.3

Gate−to−Drain Charge

QGD

18.2

SWITCHING CHARACTERISTICS (Note 4)

Turn−On Delay Time

td(on)

VGS = 4.5 V, VDS = 20 V,

ID = 20 A, RG = 3.0 W

11

ns

Rise Time

tr

68

Turn−Off Delay Time

td(off)

23

Fall Time

tf

42

DRAIN−SOURCE DIODE CHARACTERISTICS

Forward Diode Voltage

VSD

VGS = 0 V,

IS = 20 A

TJ = 25°C

0.83

1.0

V

TJ = 125°C

0.7

Reverse Recovery Time

tRR

VGS = 0 V, dIs/dt = 100 A/ms,

IS = 20 A

39

ns

Charge Time

ta

17.8

Discharge Time

tb

21

Reverse Recovery Time

QRR

33

nC

PACKAGE PARASITIC VALUES

Source Inductance

LS

Ta = 25C

2.49

nH

Drain Inductance

LD

0.02

Gate Inductance

LG

3.46

Gate Resistance

RG

1.0

W

3. Pulse Test: Pulse Width

≤ 300 ms, Duty Cycle ≤ 2%.

4. Switching characteristics are independent of operating junction temperatures.

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