NTB30N20G datasheet(2/8 Pages) ONSEMI

Part #	NTB30N20G

Description	Power MOSFET 30 Amps, 200 Volts

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Manufacturer	ONSEMI [ON Semiconductor]

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NTB30N20

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ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage

(VGS = 0 Vdc, ID = 250 mAdc)

Temperature Coefficient (Positive)

V(BR)DSS

200

−

307

−

Vdc

mV/

°C

Zero Gate Voltage Collector Current

(VGS = 0 Vdc, VDS = 200 Vdc, TJ = 25°C)

(VGS = 0 Vdc, VDS = 200 Vdc, TJ = 175°C)

IDSS

−

5.0

125

mAdc

Gate−Body Leakage Current (VGS = ± 30 Vdc, VDS = 0)

IGSS

−

±100

nAdc

ON CHARACTERISTICS

Gate Threshold Voltage

VDS = VGS, ID = 250 mAdc)

Temperature Coefficient (Negative)

VGS(th)

2.0

−

2.9

−8.9

4.0

−

Vdc

mV/

°C

Static Drain−to−Source On−State Resistance

(VGS = 10 Vdc, ID = 15 Adc)

(VGS = 10 Vdc, ID = 10 Adc)

(VGS = 10 Vdc, ID = 15 Adc, TJ = 175°C)

RDS(on)

−

0.068

0.067

0.200

0.081

0.080

0.240

W

Drain−to−Source On−Voltage

(VGS = 10 Vdc, ID = 30 Adc)

VDS(on)

−

2.0

2.5

Vdc

Forward Transconductance (VDS = 15 Vdc, ID = 15 Adc)

gFS

−

20

−

Mhos

DYNAMIC CHARACTERISTICS

Input Capacitance

(VDS = 25 Vdc, VGS = 0 Vdc, f = 1.0 MHz)

Ciss

−

2335

−

pF

Output Capacitance

(VDS = 25 Vdc, VGS = 0 Vdc, f = 1.0 MHz)

(VDS = 160 Vdc, VGS = 0 Vdc, f = 1.0 MHz)

Coss

−

380

148

−

Reverse Transfer Capacitance

(VDS = 25 Vdc, VGS = 0 Vdc, f = 1.0 MHz)

Crss

−

75

−

SWITCHING CHARACTERISTICS (Notes 3 & 4)

Turn−On Delay Time

(VDD = 100 Vdc, ID = 18 Adc,

VGS = 5.0 Vdc, RG = 2.5 W)

(VDD = 160 Vdc, ID = 30 Adc,

VGS = 10 Vdc, RG = 9.1 W)

td(on)

−

10

12

−

ns

Rise Time

tr

−

20

70

−

Turn−Off Delay Time

td(off)

−

40

82

−

Fall Time

tf

−

24

88

−

Gate Charge

(VDS = 160 Vdc, ID = 30 Adc,

VGS = 10 Vdc)

(VDS = 160 Vdc, ID = 18 Adc,

VGS = 5.0 Vdc)

Qtot

−

75

48

100

−

nC

Qgs

−

20

16

−

Qgd

−

32

−

BODY−DRAIN DIODE RATINGS (Note 3)

Forward On−Voltage

(IS = 30 Adc, VGS = 0 Vdc)

(IS = 30 Adc, VGS = 0 Vdc, TJ = 150°C)

VSD

−

0.91

0.80

1.1

−

Vdc

Reverse Recovery Time

(IS = 30 Adc, VGS = 0 Vdc,

dIS/dt = 100 A/ms)

trr

−

230

−

ns

ta

−

140

−

tb

−

85

−

Reverse Recovery Stored Charge

QRR

−

1.85

−

mC

3. Indicates Pulse Test: P. W. = 300

ms max, Duty Cycle = 2%.

4. Switching characteristics are independent of operating junction temperature.

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