NJVMJD32CT4G datasheet(3/11 Pages) ONSEMI

Part #	NJVMJD32CT4G

Description	Complementary Power Transistors

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Manufacturer	ONSEMI [ON Semiconductor]

Direct Link	http://www.onsemi.com

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MJD31, NJVMJD31T4G, MJD31C, NJVMJD31CT4G (NPN), MJD32, NJVMJD32T4G,

MJD32C, NJVMJD32CG, NJVMJD32CT4G (PNP)

http://onsemi.com

3

ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

Collector−Emitter Sustaining Voltage (Note 1)

(IC = 30 mAdc, IB = 0)

MJD31, NJVMJD31T4G, MJD32, NJVMJD32T4G

MJD31C, NJVMJD31CT4G, MJD32C, NJVMJD32CG, NJVMJD32CT4G

VCEO(sus)

40

100

−

Vdc

Collector Cutoff Current

(VCE = 40 Vdc, IB = 0)

MJD31, NJVMJD31T4G, MJD32

, NJVMJD32T4G

(VCE = 60 Vdc, IB = 0)

MJD31C, NJVMJD31CT4G, MJD32C, NJVMJD32CG, NJVMJD32CT4G

ICEO

−

50

mAdc

Collector Cutoff Current

(VCE = Rated VCEO, VEB = 0)

ICES

−

20

mAdc

Emitter Cutoff Current

(VBE = 5 Vdc, IC = 0)

IEBO

−

1

mAdc

ON CHARACTERISTICS (Note 1)

DC Current Gain

(IC = 1 Adc, VCE = 4 Vdc)

(IC = 3 Adc, VCE = 4 Vdc)

hFE

25

10

−

50

Collector−Emitter Saturation Voltage

(IC = 3 Adc, IB = 375 mAdc)

VCE(sat)

−

1.2

Vdc

Base−Emitter On Voltage

(IC = 3 Adc, VCE = 4 Vdc)

VBE(on)

−

1.8

Vdc

DYNAMIC CHARACTERISTICS

Current Gain − Bandwidth Product (Note 2)

(IC = 500 mAdc, VCE = 10 Vdc, ftest = 1 MHz)

fT

3

−

MHz

Small−Signal Current Gain

(IC = 0.5 Adc, VCE = 10 Vdc, f = 1 kHz)

hfe

20

−

1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%.

2. fT = ⎪hfe⎪• ftest.

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