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NCP45521IMNTWG-H Datasheet(PDF) 2 Page - ON Semiconductor |
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NCP45521IMNTWG-H Datasheet(HTML) 2 Page - ON Semiconductor |
2 / 10 page NCP45520, NCP45521 http://onsemi.com 2 Table 1. PIN DESCRIPTION Pin Name Function 1, 9 VIN Drain of MOSFET (0.5 V – 13.5 V), Pin 1 must be connected to Pin 9 2 EN NCP45520−H & NCP45521−H − Active−high digital input used to turn on the MOSFET, pin has an internal pull down resistor to GND NCP45520−L & NCP45521−L − Active−low digital input used to turn on the MOSFET, pin has an internal pull up resistor to VCC 3 VCC Supply voltage to controller (3.0 V − 5.5 V) 4 GND Controller ground 5 BLEED Load bleed connection, must be tied to VOUT either directly or through a resistor ≤ 1 kW 6 PG NCP45520 − Active−high, open−drain output that indicates when the gate of the MOSFET is fully charged, external pull up resistor ≥ 1 kW to an external voltage source required; tie to GND if not used SR NCP45521 − Slew rate adjustment; float if not used 7, 8 VOUT Source of MOSFET connected to load Table 2. ABSOLUTE MAXIMUM RATINGS Rating Symbol Value Unit Supply Voltage Range VCC −0.3 to 6 V Input Voltage Range VIN −0.3 to 18 V Output Voltage Range VOUT −0.3 to 18 V EN Digital Input Range VEN −0.3 to (VCC + 0.3) V PG Output Voltage Range (Note 1) VPG −0.3 to 6 V Thermal Resistance, Junction−to−Ambient, Steady State (Note 2) RθJA 40.0 °C/W Thermal Resistance, Junction−to−Ambient, Steady State (Note 3) RθJA 72.7 °C/W Thermal Resistance, Junction−to−Case (VIN Paddle) RθJC 5.3 °C/W Continuous MOSFET Current @ TA = 25°C (Notes 2 and 4) IMAX 10.5 A Continuous MOSFET Current @ TA = 25°C (Notes 3 and 4) IMAX 7.8 A Total Power Dissipation @ TA = 25°C (Note 2) Derate above TA = 25°C PD 2.50 24.9 W mW/°C Total Power Dissipation @ TA = 25°C (Note 3) Derate above TA = 25°C PD 1.37 13.8 W mW/°C Storage Temperature Range TSTG −40 to 150 °C Lead Temperature, Soldering (10 sec.) TSLD 260 °C ESD Capability, Human Body Model (Notes 5 and 6) ESDHBM 3.0 kV ESD Capability, Machine Model (Note 5) ESDMM 200 V ESD Capability, Charged Device Model (Note 5) ESDCDM 1.0 kV Latch−up Current Immunity (Notes 5 and 6) LU 100 mA Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. NCP45520 only. PG is an open−drain output that requires an external pull up resistor ≥ 1 kW to an external voltage source. 2. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu. 3. Surface−mounted on FR4 board using the minimum recommended pad size, 1 oz Cu. 4. Ensure that the expected operating MOSFET current will not cause the Short−Circuit Protection to turn the MOSFET off undesirably. 5. Tested by the following methods @ TA = 25°C: ESD Human Body Model tested per JESD22−A114 ESD Machine Model tested per JESD22−A115 ESD Charged Device Model tested per JESD22−C101 Latch−up Current tested per JESD78 6. Rating is for all pins except for VIN and VOUT which are tied to the internal MOSFET’s Drain and Source. Typical MOSFET ESD performance for VIN and VOUT should be expected and these devices should be treated as ESD sensitive. |
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