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NCP45521IMNTWG-H Datasheet(PDF) 2 Page - ON Semiconductor

Part # NCP45521IMNTWG-H
Description  ecoSWITCH Advanced Load Management
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

NCP45521IMNTWG-H Datasheet(HTML) 2 Page - ON Semiconductor

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NCP45520, NCP45521
http://onsemi.com
2
Table 1. PIN DESCRIPTION
Pin
Name
Function
1, 9
VIN
Drain of MOSFET (0.5 V – 13.5 V), Pin 1 must be connected to Pin 9
2
EN
NCP45520−H & NCP45521−H − Active−high digital input used to turn on the MOSFET, pin
has an internal pull down resistor to GND
NCP45520−L & NCP45521−L − Active−low digital input used to turn on the MOSFET, pin has
an internal pull up resistor to VCC
3
VCC
Supply voltage to controller (3.0 V − 5.5 V)
4
GND
Controller ground
5
BLEED
Load bleed connection, must be tied to VOUT either directly or through a resistor ≤ 1 kW
6
PG
NCP45520 − Active−high, open−drain output that indicates when the gate of the MOSFET is
fully charged, external pull up resistor ≥ 1 kW to an external voltage source required; tie to
GND if not used
SR
NCP45521 − Slew rate adjustment; float if not used
7, 8
VOUT
Source of MOSFET connected to load
Table 2. ABSOLUTE MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Supply Voltage Range
VCC
−0.3 to 6
V
Input Voltage Range
VIN
−0.3 to 18
V
Output Voltage Range
VOUT
−0.3 to 18
V
EN Digital Input Range
VEN
−0.3 to (VCC + 0.3)
V
PG Output Voltage Range (Note 1)
VPG
−0.3 to 6
V
Thermal Resistance, Junction−to−Ambient, Steady State (Note 2)
RθJA
40.0
°C/W
Thermal Resistance, Junction−to−Ambient, Steady State (Note 3)
RθJA
72.7
°C/W
Thermal Resistance, Junction−to−Case (VIN Paddle)
RθJC
5.3
°C/W
Continuous MOSFET Current @ TA = 25°C (Notes 2 and 4)
IMAX
10.5
A
Continuous MOSFET Current @ TA = 25°C (Notes 3 and 4)
IMAX
7.8
A
Total Power Dissipation @ TA = 25°C (Note 2)
Derate above TA = 25°C
PD
2.50
24.9
W
mW/°C
Total Power Dissipation @ TA = 25°C (Note 3)
Derate above TA = 25°C
PD
1.37
13.8
W
mW/°C
Storage Temperature Range
TSTG
−40 to 150
°C
Lead Temperature, Soldering (10 sec.)
TSLD
260
°C
ESD Capability, Human Body Model (Notes 5 and 6)
ESDHBM
3.0
kV
ESD Capability, Machine Model (Note 5)
ESDMM
200
V
ESD Capability, Charged Device Model (Note 5)
ESDCDM
1.0
kV
Latch−up Current Immunity (Notes 5 and 6)
LU
100
mA
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. NCP45520 only. PG is an open−drain output that requires an external pull up resistor ≥ 1 kW to an external voltage source.
2. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.
3. Surface−mounted on FR4 board using the minimum recommended pad size, 1 oz Cu.
4. Ensure that the expected operating MOSFET current will not cause the Short−Circuit Protection to turn the MOSFET off undesirably.
5. Tested by the following methods @ TA = 25°C:
ESD Human Body Model tested per JESD22−A114
ESD Machine Model tested per JESD22−A115
ESD Charged Device Model tested per JESD22−C101
Latch−up Current tested per JESD78
6. Rating is for all pins except for VIN and VOUT which are tied to the internal MOSFET’s Drain and Source. Typical MOSFET ESD performance
for VIN and VOUT should be expected and these devices should be treated as ESD sensitive.


Similar Part No. - NCP45521IMNTWG-H

ManufacturerPart #DatasheetDescription
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ON Semiconductor
NCP45521IMNTWG-H ONSEMI-NCP45521IMNTWG-H Datasheet
140Kb / 15P
   Advanced Load Management
September, 2014 ??Rev. 3
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