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RF1K49223 Datasheet(PDF) 2 Page - Fairchild Semiconductor

Part # RF1K49223
Description  2.5A, 30V, 0.150 Ohm, Dual P-Channel LittleFET??Power MOSFET
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Manufacturer  FAIRCHILD [Fairchild Semiconductor]
Direct Link  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

RF1K49223 Datasheet(HTML) 2 Page - Fairchild Semiconductor

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©2002 Fairchild Semiconductor Corporation
RF1K49223 Rev. B
Absolute Maximum Ratings
TA= 25
oC Unless Otherwise Specified
RF1K49223
UNITS
Drain to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS
-30
V
Drain to Gate Voltage (RGS = 20kΩ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR
-30
V
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS
±20
V
Drain Current
Continuous (Pulse Width = 5s). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM
2.5
Refer to Peak Current Curve
A
Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAS
Refer to UIS Curve
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Derate Above 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
2
0.016
W
W/oC
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
-55 to 150
oC
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg
300
260
oC
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. TJ = 25
oC to 125oC.
Electrical Specifications
TA = 25
oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Drain to Source Breakdown Voltage
BVDSS
ID = 250µA, VGS = 0V, (Figure 12)
-30
-
-
V
Gate to Source Threshold Voltage
VGS(TH)
VGS = VDS, ID = 250µA, (Figure 11)
-1
-
-3
V
Zero Gate Voltage Drain Current
IDSS
VDS = -30V,
VGS = 0V
TA = 25
oC-
-
-1
µA
TA = 150
oC-
-
-50
µA
Gate to Source Leakage Current
IGSS
VGS = ±20V
-
-
±100
nA
Drain to Source On Resistance
rDS(ON)
ID = 2.5A,
(Figure 9, 10)
VGS = -10V
-
-
0.150
VGS = -4.5V
-
-
0.360
Turn-On Time
tON
VDD = -15V, ID 2.5A,
RL = 6Ω, VGS = -10V,
RGS = 25Ω
-
-
40
ns
Turn-On Delay Time
td(ON)
-9-
ns
Rise Time
tr
-19
-
ns
Turn-Off Delay Time
td(OFF)
-60
-
ns
Fall Time
tf
-34
-
ns
Turn-Off Time
tOFF
-
-
140
ns
Total Gate Charge
Qg(TOT)
VGS = 0V to -20V
VDD = -24V,
ID 2.5A,
RL = 9.6Ω
Ig(REF) = -1.0mA
(Figure 14)
-28
35
nC
Gate Charge at -10V
Qg(-10)
VGS = 0V to -10V
-
15
19
nC
Threshold Gate Charge
Qg(TH)
VGS = 0V to -2V
-
1.5
1.9
nC
Input Capacitance
CISS
VDS = -25V, VGS = 0V,
f = 1MHz
(Figure 13)
-
580
-
pF
Output Capacitance
COSS
-
260
-
pF
Reverse Transfer Capacitance
CRSS
-38
-
pF
Thermal Resistance Junction to Ambient
RθJA
Pulse Width = 1s
Device mounted on FR-4 material
-
-
62.5
oC/W
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Source to Drain Diode Voltage
VSD
ISD = -2.5A
-
-
-1.25
V
Reverse Recovery Time
trr
ISD =-2.5A, dISD/dt = 100A/µs-
-
49
ns
RF1K49223


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