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RF1K49223 Datasheet(PDF) 2 Page - Fairchild Semiconductor |
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RF1K49223 Datasheet(HTML) 2 Page - Fairchild Semiconductor |
2 / 9 page ©2002 Fairchild Semiconductor Corporation RF1K49223 Rev. B Absolute Maximum Ratings TA= 25 oC Unless Otherwise Specified RF1K49223 UNITS Drain to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS -30 V Drain to Gate Voltage (RGS = 20kΩ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR -30 V Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS ±20 V Drain Current Continuous (Pulse Width = 5s). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM 2.5 Refer to Peak Current Curve A Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAS Refer to UIS Curve Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Derate Above 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 0.016 W W/oC Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG -55 to 150 oC Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg 300 260 oC oC CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: 1. TJ = 25 oC to 125oC. Electrical Specifications TA = 25 oC, Unless Otherwise Specified PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS Drain to Source Breakdown Voltage BVDSS ID = 250µA, VGS = 0V, (Figure 12) -30 - - V Gate to Source Threshold Voltage VGS(TH) VGS = VDS, ID = 250µA, (Figure 11) -1 - -3 V Zero Gate Voltage Drain Current IDSS VDS = -30V, VGS = 0V TA = 25 oC- - -1 µA TA = 150 oC- - -50 µA Gate to Source Leakage Current IGSS VGS = ±20V - - ±100 nA Drain to Source On Resistance rDS(ON) ID = 2.5A, (Figure 9, 10) VGS = -10V - - 0.150 Ω VGS = -4.5V - - 0.360 Ω Turn-On Time tON VDD = -15V, ID ≅ 2.5A, RL = 6Ω, VGS = -10V, RGS = 25Ω - - 40 ns Turn-On Delay Time td(ON) -9- ns Rise Time tr -19 - ns Turn-Off Delay Time td(OFF) -60 - ns Fall Time tf -34 - ns Turn-Off Time tOFF - - 140 ns Total Gate Charge Qg(TOT) VGS = 0V to -20V VDD = -24V, ID ≅ 2.5A, RL = 9.6Ω Ig(REF) = -1.0mA (Figure 14) -28 35 nC Gate Charge at -10V Qg(-10) VGS = 0V to -10V - 15 19 nC Threshold Gate Charge Qg(TH) VGS = 0V to -2V - 1.5 1.9 nC Input Capacitance CISS VDS = -25V, VGS = 0V, f = 1MHz (Figure 13) - 580 - pF Output Capacitance COSS - 260 - pF Reverse Transfer Capacitance CRSS -38 - pF Thermal Resistance Junction to Ambient RθJA Pulse Width = 1s Device mounted on FR-4 material - - 62.5 oC/W Source to Drain Diode Specifications PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS Source to Drain Diode Voltage VSD ISD = -2.5A - - -1.25 V Reverse Recovery Time trr ISD =-2.5A, dISD/dt = 100A/µs- - 49 ns RF1K49223 |
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