DG407DN-T1-E3 datasheet(4/16 Pages) VISHAY

Part #	DG407DN-T1-E3

Description	16-Ch/Dual 8-Ch High-Performance CMOS Analog Multiplexers

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Document Number: 70061

S11-0179-Rev. J, 07-Feb-11

Vishay Siliconix

DG406, DG407

SPECIFICATIONSa

Parameter

Symbol

Test Conditions

Unless Otherwise Specified

V+ = 15 V, V- = - 15 V

VAL = 0.8 V, VAH = 2.4 V

f

Temp.b

Typ.c

A Suffix

- 55 °C to 125 °C

D Suffix

- 40 °C to 85 °C

Unit

Min.d

Max.d

Min.d

Max.d

Analog Switch

Analog Signal Rangee

VANALOG

Full

- 15

15

- 15

15

V

Drain-Source

On-Resistance

RDS(on)

VD = ± 10 V, IS = - 10 mA

sequence each switch on

Room

Full

50

100

125

100

125



RDS(on) Matching Between

Channelsg

R

DS(on)

VD = ± 10 V

Room

5

%

Source Off Leakage Current

IS(off)

VEN = 0 V

VD = ± 10 V

VS = ± 10 V

Room

Full

0.01

- 0.5

- 50

0.5

50

- 0.5

- 5

0.5

5

nA

Drain Off Leakage Current

ID(off)

DG406

Room

Full

0.04

- 1

- 200

1

200

- 1

- 40

1

40

DG407

Room

Full

0.04

- 1

- 100

1

100

- 1

- 20

1

20

Drain On Leakage Current

ID(on)

VS = VD = ± 10

sequence each

switch on

DG406

Room

Full

0.04

- 1

- 200

1

200

- 1

- 40

1

40

DG407

Room

Full

0.04

- 1

- 100

1

100

- 1

- 20

1

20

Digital Control

Logic High Input Voltage

VINH

Full

2.4

V

Logic Low Input Voltage

VINL

Full

0.8

Logic High Input Current

IAH

VA = 2.4 V, 15 V

Full

- 1

1

- 1

1

µA

Logic Low Input Current

IAL

VEN = 0 V, 2.4 V, VA = 0 V

Full

- 1

1

- 1

1

Logic Input Capacitance

Cin

f = 1 MHz

Room

7

pF

Dynamic Characteristics

Transition Time

tTRANS

see figure 2

Room

Full

200

350

450

350

450

ns

Break-Before-Make Interval

tOPEN

see figure 4

Room

Full

50

25

10

25

10

Enable Turn-On Time

tON(EN)

see figure 3

Room

Full

150

200

400

200

400

Enable Turn-Off Time

tOFF(EN)

Room

Full

70

150

300

150

300

Charge Injection

Q

VS = 0 V, CL = 1 nF, RS = 0 

Room

15

pC

Off Isolationh

OIRR

VEN = 0 V, RL = 1 k

f = 100 kHz

Room

- 69

dB

Source Off Capacitance

CS(off)

VEN = 0 V, VS = 0 V, f = 1 MHz

Room

8

pF

Drain Off Capacitance

CD(off)

VEN = 0 V

VD = 0 V

f = 1 MHz

Room

130

DG407

Room

65

Drain On Capacitance

CD(on)

DG406

Room

140

DG407

Room

70

Power Supplies

Positive Supply Current

I+

VEN = VA = 0 or 5 V

Room

Full

13

30

75

30

75

µA

Negative Supply Current

I-

Room

Full

- 0.01

- 1

- 10

- 1

- 10

Positive Supply Current

I+

VEN = 2.4 V, VA = 0 V

Room

Full

50

500

900

500

700

Negative Supply Current

I-

Room

Full

- 0.01

- 20

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DG407DN-T1-E3 Datasheet(PDF) 4 Page - Vishay Siliconix

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