BS170 datasheet(4/6 Pages) VISHAY

Part #	BS170

Description	N-Channel 60-V (D-S) MOSFET

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Manufacturer	VISHAY [Vishay Siliconix]

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2N7000/2N7002, VQ1000J/P, BS170

Vishay Siliconix

www.vishay.com

11-4

Document Number: 70226

S-04279—Rev. F, 16-Jul-01

TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)

Capacitance

On-Resistance vs. Drain Current

0.0

0.2

0.4

0.6

0.8

1.0

0123456

0.0

0.2

0.4

0.6

0.8

1.0

0

123

4567

8

Output Characteristics

Transfer Characteristics

VDS – Drain-to-Source Voltage (V)

VGS = 10, 9, 8, 7 V

6.5 V

VGS – Gate-to-Source Voltage (V)

TJ = –55

_C

25

_C

125

_C

6 V

5.5 V

5 V

4.5 V

4 V

3.5 V

3 V

2.5 V

2, 1 V

0

4

8

12

16

20

0

400

800

1200

1600

2000

2400

0.0

0.5

1.0

1.5

2.0

–55

–30

–5

20

45

70

95

120

145

0

1

2

3

4

5

6

7

0.0

0.2

0.4

0.6

0.8

1.0

0

10

20

30

40

50

60

0

5

10

15

20

25

30

35

Gate Charge

Qg – Total Gate Charge (pC)

VDS – Drain-to-Source Voltage (V)

Crss

Coss

Ciss

ID = 0.5 A

ID – Drain Current (A)

On-Resistance vs. Junction Temperature

VGS = 10 V, rDS @ 0.5 A

TJ – Junction Temperature (_C)

rDS @ 10 V = VGS

rDS @ 5 V = VGS

VGS = 5 V, rDS @ 0.05 A

VGS = 0 V

f = 1 MHz

VDS = 30 V

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