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FQT7N10TF Datasheet(PDF) 2 Page - Fairchild Semiconductor |
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FQT7N10TF Datasheet(HTML) 2 Page - Fairchild Semiconductor |
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2 / 8 page  (Note 4) (Note 4, 5) (Note 4, 5) (Note 4) Electrical Characteristics TC = 25°C unless otherwise noted Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 26mH, IAS = 1.7A, VDD = 25V, RG = 25 Ω, Starting TJ = 25°C 3. ISD ≤ 7.3A, di/dt ≤ 300A/µs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test : Pulse width ≤ 300 µs, Duty cycle ≤ 2% 5. Essentially independent of operating temperature Symbol Parameter Test Conditions Min Typ Max Unit Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA 100 -- -- V ∆BV DSS / ∆T J Breakdown Voltage Temperature Coefficient ID = 250 µA, Referenced to 25°C -- 0.1 -- V/°C IDSS Zero Gate Voltage Drain Current VDS = 100 V, VGS = 0 V -- -- 1 µA VDS = 80 V, TC = 125°C -- -- 10 µA IGSSF Gate-Body Leakage Current, Forward VGS = 25 V, VDS = 0 V -- -- 100 nA IGSSR Gate-Body Leakage Current, Reverse VGS = -25 V, VDS = 0 V -- -- -100 nA On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA 2.0 -- 4.0 V RDS(on) Static Drain-Source On-Resistance VGS = 10 V, ID = 0.85 A -- 0.28 0.35 Ω gFS Forward Transconductance VDS = 40 V, ID = 0.85 A -- 1.85 -- S Dynamic Characteristics Ciss Input Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz -- 190 250 pF Coss Output Capacitance -- 60 75 pF Crss Reverse Transfer Capacitance -- 10 13 pF Switching Characteristics td(on) Turn-On Delay Time VDD = 50 V, ID = 7.3 A, RG = 25 Ω -- 7 25 ns tr Turn-On Rise Time -- 24 60 ns td(off) Turn-Off Delay Time -- 13 35 ns tf Turn-Off Fall Time -- 19 50 ns Qg Total Gate Charge VDS = 80 V, ID = 7.3 A, VGS = 10 V -- 5.8 7.5 nC Qgs Gate-Source Charge -- 1.4 -- nC Qgd Gate-Drain Charge -- 2.5 -- nC Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -- -- 1.7 A ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 6.8 A VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 1.7 A -- -- 1.5 V trr Reverse Recovery Time VGS = 0 V, IS = 7.3 A, dIF / dt = 100 A/µs -- 70 -- ns Qrr Reverse Recovery Charge -- 150 -- nC ©2001 Fairchild Semiconductor Corporation FQT7N10 Rev. C0 www.fairchildsemi.com |
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