PARAMETER

TEST CONDITIONS

SYMBOL

MIN.

TYP.

MAX.

UNITS

Peak Sensitivity Wavelength

PS

—

880

—

nm

Reception Angle

—

±12

—

Deg.

Dark Current

—

—

100

nA

Collector-Emitter Breakdown

30

—

—

V

Emitter-Collector Breakdown

4—

—

V

On-State Collector Current

Ee = 0.5 mW/cm2

0.7

—

—

mA

Saturation Voltage

Ee = 0.5 mW/cm2

—

—

0.4

V

Rise Time

—5

—

µs

Fall Time

—5

—

µs

NOTES

1. Derate power dissipation linearly 1.33 mW/°C above 25°C.

2. RMA flux is recommended.

3. Methanol or isopropyl alcohols are recommended as cleaning agents.

4. Pulse conditions: tp = 100

µs, T = 10 ms.

5.

= 940 nm, GaAs.

Parameter

Symbol

Rating

Unit

Operating Temperature

-40 to +85

°C

Storage Temperature

-40 to +85

°C

240 for 5 sec

°C

260 for 10 sec

°C

Collector Emitter Voltage

30

V

Emitter Collector Voltage

5V

100

mW

SUBMINIATURE PLASTIC SILICON

INFRARED PHOTOTRANSISTOR

QSB363

www.fairchildsemi.com

2 OF 5

8/2/01

DS300357