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QSB320F Datasheet(PDF) 1 Page - Fairchild Semiconductor |
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QSB320F Datasheet(HTML) 1 Page - Fairchild Semiconductor |
1 / 3 page PARAMETER TEST CONDITIONS SYMBOL MIN TYP MAX UNITS Peak Sensitivity Wavelength PS — 880 — nm Wavelength Sensitivity Range SR 700 — 1000 nm Reception Angle — 120 — Deg. Collector Emitter Dark Current VCE = 25 V, Ee = 0 ID — — 200 nA Collector Emitter Breakdown IC = 1 mA BVCEO 30 — — V Emitter Collector Breakdown IE = 100 µA BVECO 5— — V On-State Collector Current Ee = 0.1 mW/cm2(4), VCE = 5 V IC (ON) 16 — — µA Saturation Voltage Ee = 0.5 mW/cm2(4), IC = 0.05 mA VCE (SAT) — — 0.3 V Rise Time VCC = 5 V, RL = 100 tr —8 — µs Fall Time IC = 1 mA tf —8 — µs ELECTRICAL / OPTICAL CHARACTERISTICS (TA =25°C) NOTES 1. Derate power dissipation linearly 2.2 mW/°C above 25°C. 2. RMA flux is recommended. 3. Methanol or isopropyl alcohols are recommended as cleaning agents. 4. = 940 nm. Parameter Symbol Rating Unit Operating Temperature TOPR -55 to +100 °C Storage Temperature TSTG -55 to +100 °C Soldering Temperature (Flow)(2,3) TSOL-F 260 for 10 sec °C Collector Emitter Voltage VCE 35 V Emitter Collector Voltage VEC 5V Collector Current IC 15 mA Power Dissipation(1) PD 165 mW ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) PACKAGE DIMENSIONS 0.118 (3.0) 0.102 (2.6) 0.091 (2.3) 0.083 (2.1) 0.035 (0.9) 0.028 (0.7) 0.083 (2.1) 0.067 (1.7) 0.134 (3.4) 0.118 (3.0) 0.024 (0.6) 0.016 (0.4) 0.007 (.18) 0.005 (.12) 0.043 (1.1) 0.020 (0.5) 0.041 (0.1) 0.094 (2.4) COLLECTOR NOTES: 1. Dimensions for all drawings are in inches (millimeters). 2. Tolerance of ± .010 (.25) on all non nominal dimensions unless otherwise specified. FEATURES • Surface Mount PLCC-2 Package • Wide Reception Angle, 120° • High Sensitivity • Phototransistor Output • Matched Emitter: QEB421 • Daylight Filter SCHEMATIC EMITTER COLLECTOR QSB320F SURFACE MOUNT SILICON INFRARED PHOTOTRANSISTOR 2001 Fairchild Semiconductor Corporation DS300387 2/26/01 1 OF 3 www.fairchildsemi.com |
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