PARAMETER

TEST CONDITIONS

SYMBOL

MIN

TYP

MAX

UNITS

EMITTER

—

—

1.7

V

Forward Voltage

Reverse Current

V

I

R

—

—

100

µA

Peak Emission Wavelength

I

!

PE

—

940

—

nm

SENSOR

30

—

—

V

Collector-Emitter Breakdown Voltage

Emitter-Collector Breakdown Voltage

I

5—

—

V

Collector-Emitter Dark Current

—

—

100

nA

COUPLED

On-state Collector Current

mA

QRB1133

0.20

—

—

QRB1134

0.60

—

Collector-Emitter

—

—

0.4

V

Saturation Voltage

Rise Time

V

t

r

—8

—

µs

Fall Time

I

t

f

—8

—

Cross Talk

—

—

1.00

µA

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DS300351

Parameter

Symbol

Rating

Units

Operating Temperature

-40 to +85

°C

Storage Temperature

-40 to +85

°C

240 for 5 sec

°C

260 for 10 sec

°C

EMITTER

Continuous Forward Current

50

mA

Reverse Voltage

5V

100

mW

SENSOR

Collector-Emitter Voltage

30

V

Emitter-Collector Voltage

50

V

Collector Current

20

mA

100

mW

NOTES

1. Derate power dissipation linearly 1.67 mW/°C above 25°C.

2. RMA flux is recommended.

3. Methanol or isopropyl alcohols are recommended as cleaning agents.

5. D is the distance from the assembly face to the reflective surface.

6. Measured using an Eastman Kodak neutral test card with 90% diffused reflecting surface.

7. Cross talk is the photo current measured with current to the input diode and no reflecting surface.

PHOTOTRANSISTOR

REFLECTIVE OBJECT SENSORS

QRB1133

QRB1134