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GSIB2540 Datasheet(PDF) 1 Page - Vishay Siliconix |
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GSIB2540 Datasheet(HTML) 1 Page - Vishay Siliconix |
1 / 4 page GSIB2520, GSIB2540, GSIB2560, GSIB2580 www.vishay.com Vishay General Semiconductor Revision: 16-Aug-13 1 Document Number: 88646 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Single-Phase Single In-Line Bridge Rectifiers FEATURES • UL recognition file number E54214 • Thin single in-line package • Glass passivated chip junction • High surge current capability • High case dielectric strength of 2500 VRMS • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS General purpose use in AC/DC bridge full wave rectification for switching power supply, home appliances, office equipment, industrial automation applications. MECHANICAL DATA Case: GSIB-5S Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS-compliant, commercial grade Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 1A whisker test Polarity: As marked on body Mounting Torque: 10 cm-kg (8.8 inches-lbs) max. Recommended Torque: 5.7 cm-kg (5 inches-lbs) Notes (1) Unit case mounted on aluminum plate heatsink (2) Units mounted on PCB without heatsink PRIMARY CHARACTERISTICS Package GSIB-5S IF(AV) 25 A VRRM 200 V, 400 V, 600 V, 800 V IFSM 350 A IR 10 μA VF at IF = 12.5 V 1.0 V TJ max. 150 °C Diode variations In-Line Case Style GSIB-5S ~ ~ ~ ~ MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL GSIB2520 GSIB2540 GSIB2560 GSIB2580 UNIT Maximum repetitive peak reverse voltage VRRM 200 400 600 800 V Maximum RMS voltage VRMS 140 280 420 560 V Maximum DC blocking voltage VDC 200 400 600 800 V Maximum average forward rectified output current at TC = 98 °C (1) IF(AV) 25 A TA = 25 °C (2) 3.5 Peak forward surge current single sine-wave superimposed on rated load IFSM 350 A Rating for fusing (t < 8.3 ms) I2t 500 A2s Operating junction and storage temperature range TJ, TSTG - 55 to + 150 °C ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS SYMBOL GSIB2520 GSIB2540 GSIB2560 GSIB2580 UNIT Maximum instantaneous forward voltage drop per diode 12.5 A VF 1.00 V Maximum DC reverse current at rated DC blocking voltage per diode TA = 25 °C IR 10 μA TA = 125 °C 350 |
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