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TPS54616PWPG4 Datasheet(PDF) 5 Page - Texas Instruments |
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TPS54616PWPG4 Datasheet(HTML) 5 Page - Texas Instruments |
5 / 24 page TPS54611, TPS54612 TPS54613, TPS54614 TPS54615, TPS54616 SLVS400C − AUGUST 2001 − REVISED APRIL 2005 www.ti.com 5 ELECTRICAL CHARACTERISTICS (CONTINUED) TJ = –40°C to 125°C, VI = 3 V to 6 V (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT ERROR AMPLIFIER Error amplifier open loop voltage gain(1) 26 dB Error amplifier unity gain bandwidth(1) 3 5 MHz Error amplifier common mode input voltage range Powered by internal LDO(1) 0 VBIAS V PWM COMPARATOR PWM comparator propagation delay time, PWM comparator input to PH pin (excluding deadtime) 10-mV overdrive(1) 70 85 ns SLOW-START/ENABLE Enable threshold voltage, SS/ENA 0.82 1.20 1.40 V Enable hysteresis voltage, SS/ENA(1) 0.03 V Falling edge deglitch, SS/ENA(1) 2.5 µs TPS54611 2.6 3.3 4.1 TPS54612 3.5 4.5 5.4 Internal slow start time(1) TPS54613 4.4 5.6 6.7 ms Internal slow-start time(1) TPS54614 2.6 3.3 4.1 ms TPS54615 3.6 4.7 5.6 TPS54616 4.7 6.1 7.6 Charge current, SS/ENA SS/ENA = 0V 3 5 8 µA Discharge current, SS/ENA SS/ENA = 0.2 V, VI = 2.7 V 1.5 2.3 4.0 mA POWER GOOD Power good threshold voltage VSENSE falling 90 %VO Power good hysteresis voltage See Note 1 3 %VO Power good falling edge deglitch See Note 1 35 µs Output saturation voltage, PWRGD I(sink) = 2.5 mA 0.18 0.3 V Leakage current, PWRGD VI = 5.5 V 1 µA CURRENT LIMIT Current limit VI = 3 V(1) 7.2 10 A Current limit VI = 6 V(1) 10 12 A Current limit leading edge blanking time (see Note 1) 100 ns Current limit total response time (see Note 1) 200 ns THERMAL SHUTDOWN Thermal shutdown trip point(1) 135 150 165 _C Thermal shutdown hysteresis(1) 10 _C OUTPUT POWER MOSFETS r Power MOSFET switches IO = 3 A, VI = 6 V(2) 26 47 mΩ rDS(on) Power MOSFET switches IO = 3 A, VI = 3 V(2) 36 65 mΩ (1) Specified by design (2) Matched MOSFETs, low side rDS(on) production tested, high side rDS(on) specified by design. |
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