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T491D106K035AT Datasheet(PDF) 5 Page - Freescale Semiconductor, Inc

Part # T491D106K035AT
Description  RF Power Field Effect Transistor N--Channel Enhancement--Mode Lateral MOSFET
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Manufacturer  FREESCALE [Freescale Semiconductor, Inc]
Direct Link  http://www.freescale.com
Logo FREESCALE - Freescale Semiconductor, Inc

T491D106K035AT Datasheet(HTML) 5 Page - Freescale Semiconductor, Inc

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MRF6VP2600HR6
5
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
ηD
Gps
VDD =50 Vdc,IDQ = 2600 mA
f = 225 MHz
Pulse Width = 100 μsec
Duty Cycle = 20%
50
1
1000
020
10
VDS, DRAIN--SOURCE VOLTAGE (VOLTS)
Figure 4. Capacitance versus Drain--Source Voltage
30
Ciss
100
10
40
Coss
Crss
Measured with ±30 mV(rms)ac @ 1 MHz
VGS =0 Vdc
1
100
110
10
VDS, DRAIN--SOURCE VOLTAGE (VOLTS)
Figure 5. DC Safe Operating Area
100
26.5
10
0
80
100
25.5
24.5
23.5
70
60
50
40
30
Pout, OUTPUT POWER (WATTS) PULSED
Figure 6. Pulsed Power Gain and Drain Efficiency
versus Output Power
25
24
22.5
1000
20
52
64
27
62
Pin, INPUT POWER (dBm)
Figure 7. Pulsed CW Output Power versus
Input Power
60
38
26
58
31
32
33
34
35
36
37
P3dB = 59.7 dBm (938 W)
Actual
Ideal
P2dB = 59.1 dBm (827 W)
21
26
0
25
24
Pout, OUTPUT POWER (WATTS) PULSED
Figure 8. Pulsed Power Gain versus
Output Power
100
23
600
700
Figure 9. Pulsed Power Gain and Drain Efficiency
versus Output Power
Pout, OUTPUT POWER (WATTS) PULSED
21
28
10
25
27
26
100
1000
VDD =50 Vdc,IDQ = 2600 mA, f = 225 MHz
Pulse Width = 12 μsec, Duty Cycle = 1%
VDD =50 Vdc
IDQ = 2600 mA
f = 225 MHz
Pulse Width = 100 μsec
Duty Cycle = 20%
56
54
29
30
28
P1dB = 53.3 dBm (670 W)
22
200
300
400
500
VDD =30 V
35 V
40 V
45 V
50 V
ηD
25_C
TC =--30_C
85_C
Gps
22
24
23
VDD =50 Vdc,IDQ = 2600 mA
f = 225 MHz
Pulse Width = 100 μsec
Duty Cycle = 20%
TC =25_C
TJ = 150_C
TJ = 175_C
10
80
50
70
60
20
40
30
23
10
Note: Each side of device measured separately.
Note: Each side of device measured separately.
TJ = 200_C


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