FQD13N10_13 datasheet(4/9 Pages) FAIRCHILD

Part #	FQD13N10

Description	N-Channel QFET MOSFET

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Manufacturer	FAIRCHILD [Fairchild Semiconductor]

Direct Link	http://www.fairchildsemi.com

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4 / 9 page

-100

-50

0

50

100

150

200

0.0

0.5

1.0

1.5

2.0

2.5

※ Notes :

1. V

GS = 10 V

2. I

D = 5.0 A

T

J, Junction Temperature [

o

C]

-100

-50

0

50

100

150

200

0.8

0.9

1.0

1.1

1.2

※ Notes :

1. V

GS = 0 V

2. I

D

= 250 μA

T

J, Junction Temperature [

o

C]

10

-5

10

-4

10

-3

10

-2

10

-1

10

0

10

1

10

-1

10

0

※ N o te s :

1 . Z

θ JC(t ) = 3 . 1 3

℃ /W M a x .

2 . D u ty F a c to r , D = t

1 /t 2

3 . T

JM - T C

= P

DM * Z θ JC (t )

s i ng le pu ls e

D= 0 . 5

0. 0 2

0. 2

0. 0 5

0. 1

0. 0 1

t

1 , S q u a r e

W a v e P u ls e D u ra tio n [s e c ]

25

50

75

100

125

150

0

2

4

6

8

10

T

C, Case Temperature [

℃]

10

0

10

1

10

2

10

-1

10

0

10

1

10

2

DC

10 ms

1 ms

100

µs

Operation in This Area

is Limited by R

DS(on)

※ Notes :

1. T

C = 25

o

C

2. T

J = 150

o

C

3. Single Pulse

V

DS, Drain-Source Voltage [V]

Typical Characteristics (Continued)

Figure 9. Maximum Safe Operating Area

Figure 10. Maximum Drain Current

vs. Case Temperature

Figure 7. Breakdown Voltage Variation

vs. Temperature

Figure 8. On-Resistance Variation

vs. Temperature

Figure 11. Transient Thermal Response Curve

t

1

PDM

t

2

FQD13N10 / FQU13N10 Rev. C0

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