FQI34P10 datasheet(4/9 Pages) FAIRCHILD

Part #	FQI34P10

Description	P-Channel QFET MOSFET

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Manufacturer	FAIRCHILD [Fairchild Semiconductor]

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FQB34P10 / FQI34P10 Rev. C0

Typical Characteristics (Continued)

Figure 9. Maximum Safe Operating Area

Figure 10. Maximum Drain Current

vs. Case Temperature

Figure 11. Transient Thermal Response Curve

10

-5

10

-4

10

-3

10

-2

10

-1

10

0

10

1

10

-2

10

-1

10

0

※

N otes :

1. Z

θ JC(t) = 0.97

/W M ax.

℃

2. D uty Factor, D =t

1/t2

3. T

JM - T C = P DM * Z θ JC(t)

single pulse

D= 0 .5

0.02

0.2

0.0 5

0.1

0.01

t

1, S q uar e W a ve P u ls e D u ra tion [s ec]

t1

PDM

t2

10

0

10

1

10

2

10

-1

10

0

10

1

10

2

DC

10 ms

1 ms

100

μs

Operation in This Area

is Limited by R

DS(on)

※

Notes :

1. T

C = 25

oC

2. T

J = 175

oC

3. Single Pulse

-V

DS, Drain-Source Voltage [V]

25

50

75

100

125

150

175

0

5

10

15

20

25

30

35

40

T

C, Case Temperature [

]

℃

-100

-50

0

50

100

150

200

0.8

0.9

1.0

1.1

1.2

※

Notes:

1. V

GS = 0 V

2. I

D = -250 μ A

T

J, Junction Temperature [

oC]

-100

-50

0

50

100

150

200

0.0

0.5

1.0

1.5

2.0

2.5

※

Notes:

1. V

GS = -10 V

2. I

D = -16.75 A

T

J, Junction Temperature [

oC]

Figure 7. Breakdown Voltage Variation

vs. Temperature

Figure 8. On-Resistance Variation

vs. Temperature

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