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PN3638A Datasheet(PDF) 2 Page - Fairchild Semiconductor |
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PN3638A Datasheet(HTML) 2 Page - Fairchild Semiconductor |
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2 / 2 page  PNP General Purpose Amplifier (continued) Electrical Characteristics TA = 25°C unless otherwise noted OFF CHARACTERISTICS Symbol Parameter Test Conditions Min Max Units V(BR)CEO Collector-Emitter Breakdown Voltage* IC = 10 mA, IB = 0 25 V V(BR)CES Collector-Emitter Breakdown Voltage* IC = 100 µA, I B = 0 25 V V(BR)CBO Collector-Base Breakdown Voltage IC = 10 µA, I E = 0 25 V V(BR)EBO Emitter-Base Breakdown Voltage IE = 10 µA, I C = 0 4.0 V ICES Collector-Cutoff Current VCE = 15 V, IE = 0 VCE = 15 V, IE = 0, TA = 65 °C 35 2.0 nA µA ON CHARACTERISTICS* hFE DC Current Gain VCE = 1.0 V, IC = 50 mA PN3638 PN3638A VCE = 2.0 V, IC = 300 mA PN3638 PN3638A VCE = 10 V, IC = 100 mA PN3638 PN3638A VCE = 10 V, IC = 1.0 mA PN3638A 30 100 30 20 20 80 100 VCE(sat) Collector-Emitter Saturation Voltage IC = 50 mA, IB = 2.5 mA IC = 300 mA, IB = 30 mA 0.25 1.0 V V VBE(sat) Base-Emitter Saturation Voltage IC = 50 mA, IB = 2.5 mA IC = 300 mA, IB = 30 mA 0.8 1.1 2.0 V V SMALL SIGNAL CHARACTERISTICS Cob Output Capacitance VCB = 10 V, f = 1.0 MHz PN3638 PN3638A 20 10 pF pF Cib Input Capacitance VBE = 0.5 V, f = 1.0 MHz PN3638 PN3638A 65 25 pF pF hfe Small-Signal Current Gain IC = 50 mA, VCE = 3.0 V, f = 100 MHz PN3638 PN3638A IC = 10 mA, VCE = 10 V, f = 1.0 kHz PN3638 PN3638A 1.0 1.5 25 100 hie Input Impedance IC = 10 mA, VCE = 10 V, 2.0 k Ω hoe Output Admittance f = 1.0 kHz 1.2 µmhos hre Voltage Feedback Ratio PN3638 PN3638A 26 15 x10 -4 x10 -4 SWITCHING CHARACTERISTICS *Pulse Test: Pulse Width ≤300µs, Duty Cycle ≤2.0% ton Turn-on Time VCC = 10 V, IC = 300 mA, 75 ns td Delay Time IB1 = 30 mA 20 ns tr Rise Time 70 ns toff Turn-off Time VCC = 10 V, IC = 300 mA 170 ns ts Storage Time IB1 = IB2 = 30 mA 140 ns tf Fall Time 70 ns |
Similar Part No. - PN3638A |
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Similar Description - PN3638A |
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