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2N1132L Datasheet(PDF) 2 Page - Microsemi Corporation

Part No. 2N1132L
Description  LOW POWER PNP SILICONTRANSISTOR
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Maker  MICROSEMI [Microsemi Corporation]
Homepage  http://www.microsemi.com
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 2 page
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TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
Gort Road Business Park, Ennis, Co. Clare, Ireland
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298
Website: http: //www.microsemi.com
T4-LDS-0187 Rev. 1 (101882)
Page 2 of 3
ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted) (CONT.)
Parameters / Test Conditions
Symbol
Min.
Max.
Unit
ON CHARACTERTICS
(3)
Forward-Current Transfer Ratio
hFE
IC = 150mAdc, VCE = 10Vdc
2N1131, L
2N1132, L
20
30
45
90
IC = 5.0mAdc, VCE = 10Vdc
2N1131, L
2N1132, L
15
25
Collector-Emitter Saturation Voltage
VCE(sat)
Vdc
IC = 150mAdc, IB = 15mAdc
1.3
Base-Emitter Saturation Voltage
VBE(sat)
Vdc
IC = 150mAdc, IB = 15mAdc
1.5
DYNAMIC CHARACTERISTICS
Parameters / Test Conditions
Symbol
Min.
Max.
Unit
Small-Signal Short-Circuit Forward-Current Transfer Ratio
IC = 1.0mAdc, VCE = 5.0Vdc, f = 1.0kHz
2N1131, L
2N1132, L
hfe
15
30
50
90
IC = 5.0mAdc, VCE = 10Vdc, f = 1.0kHz
2N1131, L
2N1132, L
20
30
Small-Signal Open-Circuit Output Admittance
hob
µmho
IC = 1.0mAdc, VCE = 5.0Vdc, f = 1.0kHz
IC = 5.0mAdc, VCE = 10Vdc, f = 1.0kHz
1.0
5.0
Small-Signal Short-Circuit Input Impedance
IC = 1.0mAdc, VCE = 5.0Vdc, f = 1.0kHz
IC = 5.0mAdc, VCE = 10Vdc, f = 1.0kHz
hib
25
35
10
Magnitude of Common Emitter Small-Signal Short Circuit
Forward-Current Transfer Ratio
|hfe|
IC = 50mAdc, VCE = 10Vdc, f = 20MHz
2N1131, L
2N1132, L
2.5
3.0
20
20
Output Capacitance
Cobo
pF
VCB = 10Vdc, IE = 0, 100 kHz ≤ f ≤ 1.0MHz
4.5
Iutput Capacitance
Cibo
pF
VEB = 0.5Vdc, IC = 0, 100 kHz ≤ f ≤ 1.0MHz
80
SWITCHING CHARACTERISTICS
Parameters / Test Conditions
Symbol
Min.
Max.
Unit
Turn-On Time + Turn-Off Time
(See figure 2 of MIL-PRF-177)
ton + toff
50
ηs
(3) Pulse Test: Pulse Width = 300
μs, Duty Cycle ≤ 2.0%




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