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2N1132L Datasheet(PDF) 1 Page - Microsemi Corporation

Part No. 2N1132L
Description  LOW POWER PNP SILICONTRANSISTOR
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Maker  MICROSEMI [Microsemi Corporation]
Homepage  http://www.microsemi.com
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TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
Gort Road Business Park, Ennis, Co. Clare, Ireland
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298
Website: http: //www.microsemi.com
LOW POWER PNP SILICONTRANSISTOR
Qualified per MIL-PRF-19500/177
T4-LDS-0187 Rev. 1 (101882)
Page 1 of 3
DEVICES
LEVELS
2N1131
2N1132
JAN
2N1131L
2N1132L
JANTX
JANTXV
ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted)
Parameters / Test Conditions
Symbol
Value
Unit
Collector-Emitter Voltage
VCEO
40
Vdc
Collector-Base Voltage
VCBO
50
Vdc
Emitter-Base Voltage
VEBO
5.0
Vdc
Collector Current
IC
600
mAdc
Total Power Dissipation
@ TA = +25°C
(1)
@ TC = +25°C
(2)
PT
0.6
2.0
W
Operating & Storage Junction Temperature Range
TJ, Tstg
-65 to +200
°C
NOTES:
1/ Derate linearly 3.43mW/°C for TA > +25°C
2/ Derate linearly 11.4mW/°C for TC > +25°C
ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted)
Parameters / Test Conditions
Symbol
Min.
Max.
Unit
OFF CHARACTERTICS
Collector-Emitter Breakdown Voltage
V(BR)CEO
Vdc
IC = 10mAdc
40
Collector- Base Breakdown Voltage
V(BR)CBO
Vdc
IC = 10µAdc
50
Emitter-Base Cutoff Current
IEBO
VEB = 5.0Vdc
100
µAdc
Collector-Emitter Cutoff Current
ICER
mAdc
VCE = 50Vdc, RBE ≤ 10 ohms
10
Collector-Base Cutoff Current
ICBO
VCB = 50Vdc
VCB = 30Vdc
10
1.0
µAdc
TO-39
2N1131, 2N1132
TO-5
2N1131L, 2N1132L




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