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H11AG1M Datasheet(PDF) 2 Page - Fairchild Semiconductor |
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H11AG1M Datasheet(HTML) 2 Page - Fairchild Semiconductor |
2 / 10 page ©2007 Fairchild Semiconductor Corporation www.fairchildsemi.com H11AG1M Rev. 1.0.3 2 Absolute Maximum Ratings Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Symbol Parameters Value Units TOTAL DEVICE TSTG Storage Temperature -55 to +150 °C TOPR Operating Temperature -40 to +100 °C TSOL Lead Solder Temperature (Wave Solder) 260 for 10 sec °C PD Total Device Power Dissipation @ 25°C (LED plus detector) Derate Linearly From 25°C 260 mW 3.5 mW/°C EMITTER IF Continuous Forward Current 50 mA VR Reverse Voltage 6 V IF(pk) Forward Current – Peak (1µs pulse, 300pps) 3.0 A PD LED Power Dissipation 25°C Ambient Derate Linearly From 25°C 75 mW 1.0 mW/°C DETECTOR PD Detector Power Dissipation @ 25°C Derate Linearly from 25°C 150 mW 2.0 mW/°C IC Continuous Collector Current 50 mA |
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