NSS40301MZ4 datasheet(1/6 Pages) ONSEMI

Part #	NSS40301MZ4

Description	Bipolar Power Transistors 40 V, 3.0 A, Low VCE(sat)

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Manufacturer	ONSEMI [ON Semiconductor]

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September, 2013 − Rev. 3

1

Publication Order Number:

NSS40301MZ4/D

NSS40301MZ4

Bipolar Power Transistors

40 V, 3.0 A, Low VCE(sat)

NPN Transistor

ON Semiconductor’s e2PowerEdge family of low VCE(sat)

transistors are surface mount devices featuring ultra low saturation

voltage (VCE(sat)) and high current gain capability. These are designed

for use in low voltage, high speed switching applications where

affordable efficient energy control is important.

Typical applications are DC−DC converters and power management

in portable and battery powered products such as cellular and cordless

phones, PDAs, computers, printers, digital cameras and MP3 players.

Other applications are low voltage motor controls in mass storage

products such as disc drives and tape drives. In the automotive

industry they can be used in air bag deployment and in the instrument

cluster. The high current gain allows e2PowerEdge devices to be

driven directly from PMU’s control outputs, and the Linear Gain

(Beta) makes them ideal components in analog amplifiers.

Features

• Complement to NSS40300MZ4 Series

• NSV Prefix for Automotive and Other Applications Requiring

Unique Site and Control Change Requirements; AEC−Q101

Qualified and PPAP Capable

• These Devices are Pb−Free, Halogen Free/BFR Free and are

RoHS Compliant

MAXIMUM RATINGS (TC = 25°C unless otherwise noted)

Rating

Symbol

Value

Unit

Collector−Emitter Voltage

VCEO

40

Vdc

Collector−Base Voltage

VCB

40

Vdc

Emitter−Base Voltage

VEB

6.0

Vdc

Base Current − Continuous

IB

1.0

Adc

Collector Current − Continuous

IC

3.0

Adc

Collector Current − Peak

ICM

5.0

Adc

Total Power Dissipation

Total PD @ TA = 25°C (Note 1)

Total PD @ TA = 25°C (Note 2)

PD

2.0

0.80

W

Operating and Storage Junction

Temperature Range

TJ, Tstg

– 55 to + 150

°C

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. Mounted on 1” sq. (645 sq. mm) Collector pad on FR−4 bd material.

2. Mounted on 0.012” sq. (7.6 sq. mm) Collector pad on FR−4 bd material.

SOT−223

CASE 318E

STYLE 1

MARKING DIAGRAM

Schematic

C 2, 4

B 1

E 3

Top View Pinout

C

CE

B

4

12

3

NPN TRANSISTOR

3.0 AMPERES

40 VOLTS, 2.0 WATTS

See detailed ordering and shipping information in the package

dimensions section on page 5 of this data sheet.

ORDERING INFORMATION

PIN ASSIGNMENT

http://onsemi.com

1

40301

G

AYW

A

= Assembly Location

Y

Year

W

= Work Week

40301

= Specific Device Code

G

= Pb−Free Package

3

2

1

4

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