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NCP5351MNR2 Datasheet(PDF) 9 Page - ON Semiconductor |
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NCP5351MNR2 Datasheet(HTML) 9 Page - ON Semiconductor |
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9 / 14 page  NCP5351 http://onsemi.com 9 TYPICAL PERFORMANCE CHARACTERISTICS Conditions: BST − DRN = 5.0 V; Room Temperature; Oscilloscope referenced to VS (5.0 V). Figure 5. Top Gate Sinking Current from 0.108 W Figure 6. Top Gate Sinking Conditions: VS = 5.0 V; Room Temperature; CO = 0 V. Figure 7. Bottom Gate Sinking Current from 0.108 W Figure 8. Bottom Gate Sinking 0 V 0 V −5.0 V −5.0 V CO TG 0 V −5.0 V Input Pulse 50 ns −3.5 V 0 V −4.5 V −0.5 V DRN BG −3.5 V −4.5 V Input Pulse 50 ns VS BST PGND DRN EN CO TG BG −5.0 V R1 1.0 k R2* 0.108 W *Applied after power up and input. C4 100 nF C3 100 nF C2 1.0 mF C1 1.0 mF COM HOT VS PGND CO EN BST TG BG −5.0 V R1 1.0 k R2* 0.108 W *Applied after power up and input. C1 1.0 mF COM HOT DRN R3 50 C2 1.0 mF |
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