NCV8452STT1G datasheet(11/13 Pages) ONSEMI

Part #	NCV8452STT1G

Description	Self Protected High Side Driver with Temperature

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Manufacturer	ONSEMI [ON Semiconductor]

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NCV8452

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11

TYPICAL CHARACTERISTIC CURVES

3

−50 −25

0

175

150

125

25

50

100

75

TJ (°C)

Figure 34. Slew Rate Off vs. Junction

Temperature

2.5

2

1.5

1

0.5

0

RL = 24 W

VD = 35 V

VD = 13.5 V

VD = 5 V

1.0

0

0.2

1.2

1.0

0.4

0.8

0.6

−VD (V)

Figure 35. Supply−to−Ground Reverse

Characteristics

0.8

0.6

0.4

0.2

0

25°C

100°C

150°C

−40°C

5.0

0

0.2

1.2

1.0

0.4

0.8

0.6

VOUT − VD (V)

Figure 36. Power FET Body Forward

Characteristics

4.5

4.0

3.5

3.0

2.5

2.0

1.5

1.0

0.5

0

−40°C

25°C

100°C

150°C

10

10000

100

1000

L (mH)

Figure 37. Single Pulse Maximum Switch Off

Current vs. Load Inductance

10

1

0.1

VD = 13.5 V,

RL = 0 W

TJstart = 25°C

TJstart = 150°C

10

10000

100

1000

L (mH)

Figure 38. Single Pulse Maximum Switch Off

Energy vs. Load Inductance

1000

VD = 13.5 V,

RL = 0 W

TJstart = 25°C

TJstart = 150°C

100

10

1

25

40

30

35

VD (V)

Figure 39. Initial Short−Circuit Shutdown Time

vs. Supply Voltage

1000

0

100

10

1

0.1

510

15

20

TJstart = 25°C

TJstart = 150°C

TJstart = 100°C

TJstart = −40°C

RL = 0 W

No heatsink attached

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