NCP4523G20T1G datasheet(4/24 Pages) ONSEMI

Part #	NCP4523G20T1G

Description	CMOS 3CH?묹DOs for RF Unit

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Manufacturer	ONSEMI [ON Semiconductor]

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NCP4523

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ELECTRICAL CHARACTERISTICS

VR2 (Topt = 25°C)

Characteristics

Conditions

Symbol

Min

Typ

Max

Unit

Output Voltage

VIN − VOUT = 1.0 V

1.0 mA

v IOUT v 30 mA

VOUT

0.98

−

1.02

V

Output Current

VIN − VOUT = 1.0 V

IOUT

80

−

mA

Load Regulation

VIN − VOUT = 1.0 V

1.0 mA

v IOUT v 50 mA

DVOUT/DIOUT

−

12

40

mV

Dropout Voltage

Refer to Electrical Characteristic

by Output Voltage (VR2)

VDIF

−

Supply Current

VIN − VOUT = 1.0 V

ISS

−

70

120

mA

Supply Current (Standby)

VIN − VOUT = 1.0 V

VCE = GND

Istandby

−

0.1

1.0

mA

Line Regulation

VOUT + 0.5 V v VIN v 6.0 V

I

v = 30 mA

DVOUT/DVIN

−

0.05

0.20

V

Ripple Rejection

f = 1.0 kHz, sinusoidal 0.5 Vp−p

VIN − VOUT = 1.0 V

RR

−

70

−

dB

Input Voltage

−

VIN

−

6.0

V

Output Voltage Temperature

Coefficient

IOUT = 30 mA

−40

°C v Topt v 85°C

DVOUT/DT

−

"100

−

ppm/

°C

Short Current Limit

VOUT = 0 V

ILIM

−

50

−

mA

CE Pull−down Resistance

−

RDN

2.5

5.0

10

M

W

CE Input Voltage “H’’

−

VCEH

1.5

−

VIN

V

CE Input Voltage “L’’

−

VCEL

0.00

−

0.25

V

Output Noise

BW = 10 Hz − 100 kHz

en

−

60

−

mVrms

ELECTRICAL CHARACTERISTICS BY OUTPUT VOLTAGE (VR2)

Output Voltage

VOUT (V)

Dropout Voltage VDIF (V)

Condition

Typ

Max

2.0

v VOUT v 2.4

IOUT = 80 mA

0.22

0.38

2.5

v VOUT v 2.7

0.20

0.38

2.8

v VOUT v 3.3

0.16

0.24

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NCP4523G20T1G Datasheet(PDF) 4 Page - ON Semiconductor

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