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LV8019V-TLM-E Datasheet(PDF) 2 Page - ON Semiconductor |
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LV8019V-TLM-E Datasheet(HTML) 2 Page - ON Semiconductor |
2 / 6 page LV8019V No.A0724-2/6 Recommended Operating Conditions at Ta = 25 °C and SGND = PGND = 0V Parameter Symbol Conditions Ratings Unit Output block supply voltage VM 3.0 to 7.4 V Control block supply voltage VCC 2.7 to 6.0 V Constant current output block supply voltage VRGIN 1.5 to VCC V Input signal voltage VIN 0 to VCC V Maximum input signal frequency fmax Duty = 50% 100 kHz Electrical Characteristics Ta = 25°C, VCC = VM = 5V, and SGND = PGND = 0V unless otherwise specified. Ratings Parameter Symbol Conditions min typ max Unit Standby mode output block current consumption IMO EN = 0V, IN1 = IN2 = ICTRL = 0V 1.0 μA Standby mode ICCO EN = 0V, IN1 = IN2 = ICTRL = 0V 0 1.0 μA Control block current consumption Operation mode ICC EN = 5V 0.8 1.3 mA High-level input voltage VINH 2.5 VCC V Low-level input voltage VINL 0 0.8 V High-level input current IINH 1.0 μA Low-level input current IINL -1.0 μA High-level EN pin current IENH EN pin 15 25 35 μA Low-level EN pin current IENL EN pin 1.0 μA 1 RON1 VM = 5V, sink + source 0.45 0.55 Ω Output on resistance 2 RON2 VM = 3V, sink + source 0.60 0.75 Ω ISET setting resistance RSET Between ISET pin and SGND 80 Ω ISET pin voltage VISET RSET > 80 Ω 0.90 1.05 1.20 V CC pin output saturation voltage VCSAT RSET > 150 Ω *1 1.5 V CC pin output leakage current ICONL CTRL = 0V 1.0 μA Low voltage shutdown operation voltage VLVD VCC pin voltage detection 2.10 2.35 2.60 V High-level output turn-on time TOH The transition from 10% to 90% of the output amplitude *2 0.1 1.0 μs Low-level output turn-on time TOL The transition from 90% to 10% of the output amplitude *2 0.2 2.0 μs Thermal shutdown temperature TSD *2 150 180 °C Thermal shutdown hysteresis ΔTSD *2 40 °C *1 : Voltage between CC pin and ISET pin *2 : Design guarantee: These characteristics are not measured. |
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