NDT452AP datasheet(3/6 Pages) FAIRCHILD

Part #	NDT452AP

Description	P-Channel Enhancement Mode Field Effect Transistor

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Manufacturer	FAIRCHILD [Fairchild Semiconductor]

Direct Link	http://www.fairchildsemi.com

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3 / 6 page

Electrical Characteristics (T

A = 25°C unless otherwise noted)

Symbol

Parameter

Conditions

Min

Typ

Max

Units

DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS

I

S

Maximum Continuous Drain-Source Diode Forward Current

-2.5

A

V

SD

Drain-Source Diode Forward Voltage

V

GS = 0 V, IS = -2.5 A

(Note 2)

-0.85

-1.2

V

t

rr

Reverse Recovery Time

V

GS = 0 V, IF = -2.5 A, dIF/dt = 100 A/µs

100

ns

Notes:

1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by

design while RθCA is determined by the user's board design.

PD

(t) = TJ−TA

RθJA(t) =

TJ−TA

R

θJC+RθCA(t )

= I

D

2

(t) × R

DS

(ON ) TJ

Typical RθJA using the board layouts shown below on 4.5"x5" FR-4 PCB in a still air environment:

a. 42

oC/W when mounted on a 1 in2 pad of 2oz copper.

b. 95

oC/W when mounted on a 0.066 in2 pad of 2oz copper.

c. 110

oC/W when mounted on a 0.0123 in2 pad of 2oz copper.

Scale 1 : 1 on letter size paper

2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%.

NDT452AP Rev. B1

1a

1b

1c

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