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SIHFR110 Datasheet(PDF) 7 Page - Kersemi Electronic Co., Ltd. |
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SIHFR110 Datasheet(HTML) 7 Page - Kersemi Electronic Co., Ltd. |
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7 / 7 page  www.kersemi.com 7 IRFR110, IRFU110, SiHFR110, SiHFU110 Fig. 14 -For N-Channel P.W. Period dI/dt Diode recovery dV/dt Ripple ≤ 5 % Body diode forward drop Re-applied voltage Reverse recovery current Body diode forward current VGS = 10 V* VDD ISD Driver gate drive D.U.T. ISD waveform D.U.T. VDS waveform Inductor current D = P.W. Period + - + + + - - - * VGS = 5 V for logic level devices and 3 V drive devices Peak Diode Recovery dV/dt Test Circuit RG VDD • dV/dt controlled by RG • ISD controlled by duty factor "D" • D.U.T. - device under test D.U.T. Circuit layout considerations • Low stray inductance • Ground plane • Low leakage inductance current transformer |
Similar Part No. - SIHFR110 |
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