AUIRFR48Z

D-Pak

AUIRFR48Z

Features

●

Advanced Process Technology

●

Ultra Low On-Resistance

●

175°C Operating Temperature

●

Fast Switching

●

Repetitive Avalanche Allowed up to Tjmax

●

Lead-Free, RoHS Compliant

●

Automotive Qualified *

Description

Specifically designed for Automotive applications,

thi

Power MOSFET utilizes the latest

processing techniques to achieve extremely low on-

resistance per silicon area. Additional features of this

design are a 175°C junction operating temperature,

fast switching speed and improved repetitive ava-

lanche rating . These features combine to make this

design an extremely efficient and reliable device for

use in Automotive applications and a wide variety of

other applications.

Absolute Maximum Ratings

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These

are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in

the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device

reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.

55V

11mΩ

62A

42A

S

D

G

Parameter

Units

A

Pulsed Drain Current

™

W

Linear Derating Factor

W/°C

Gate-to-Source Voltage

V

Single Pulse Avalanche Energy (Thermally Limited)

d

mJ

Single Pulse Avalanche Energy Tested Value

h

Avalanche Current

Ù

A

Repetitive Avalanche Energy

g

mJ

Operating Junction and

Storage Temperature Range°C

Soldering Temperature, for 10 seconds (1.6mm from case )

Thermal Resistance

Parameter

Typ.

Max.

Units

Junction-to-Case

j

–––

1.64

Junction-to-Ambient (PCB mount)

i

–––

40

°C/W

Junction-to-Ambient

–––

110

110

74

See Fig.12a, 12b, 15, 16

91

0.61

± 20

Max.

62

44

250

42

-55 to + 175

300

2014-8-22

1

www.kersemi.com