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IRFU48Z Datasheet(PDF) 1 Page - Kersemi Electronic Co., Ltd. |
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IRFU48Z Datasheet(HTML) 1 Page - Kersemi Electronic Co., Ltd. |
1 / 11 page AUIRFR48Z D-Pak AUIRFR48Z Features ● Advanced Process Technology ● Ultra Low On-Resistance ● 175°C Operating Temperature ● Fast Switching ● Repetitive Avalanche Allowed up to Tjmax ● Lead-Free, RoHS Compliant ● Automotive Qualified * Description Specifically designed for Automotive applications, thi Power MOSFET utilizes the latest processing techniques to achieve extremely low on- resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive ava- lanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications. Absolute Maximum Ratings Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified. V(BR)DSS 55V RDS(on) max. 11mΩ ID (Silicon Limited) 62A ID (Package Limited) 42A S D G Parameter Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited) ID @ TC = 100°C Continuous Drain Current, VGS @ 10V A ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Package Limited) IDM Pulsed Drain Current PD @TC = 25°C Power Dissipation W Linear Derating Factor W/°C VGS Gate-to-Source Voltage V EAS Single Pulse Avalanche Energy (Thermally Limited) d mJ EAS (tested ) Single Pulse Avalanche Energy Tested Value h IAR Avalanche Current à A EAR Repetitive Avalanche Energy g mJ TJ Operating Junction and TSTG Storage Temperature Range°C Soldering Temperature, for 10 seconds (1.6mm from case ) Thermal Resistance Parameter Typ. Max. Units RθJC Junction-to-Case j ––– 1.64 RθJA Junction-to-Ambient (PCB mount) i ––– 40 °C/W RθJA Junction-to-Ambient ––– 110 110 74 See Fig.12a, 12b, 15, 16 91 0.61 ± 20 Max. 62 44 250 42 -55 to + 175 300 2014-8-22 1 www.kersemi.com |
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