www.kersemi.com

1

Power MOSFET

IRFR320, IRFU320, SiHFR320, SiHFU320

FEATURES

• Dynamic dV/dt Rating

• Repetitive Avalanche Rated

• Surface Mount (IRFR320/SiHFR320)

• Straight Lead (IRFU320/SiHFU320)

• Available in Tape and Reel

• Fast Switching

• Ease of Paralleling

• Lead (Pb)-free Available

DESCRIPTION

Third generation Power MOSFETs from Vishay provide the

designer with the best combination of fast switching,

ruggedized

device

design,

low

on-resistance

and

cost-effectiveness.

The DPAK is designed for surface mounting using vapor

phase, infrared, or wave soldering techniques. The straight

lead version (IRFU/SiHFU series) is for through-hole

mounting applications. Power dissipation levels up to 1.5 W

are possible in typical surface mount applications.

Note

a. See device orientation.

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

d. 1.6 mm from case.

e. When mounted on 1" square PCB (FR-4 or G-10 material).

PRODUCT SUMMARY

400

1.8

20

3.3

11

Configuration

Single

N-Channel MOSFET

G

D

S

DPAK

(TO-252)

IPAK

(TO-251)

Available

RoHS*

COMPLIANT

ORDERING INFORMATION

Package

DPAK (TO-252)

DPAK (TO-252)

DPAK (TO-252)

DPAK (TO-252)

IPAK (TO-251)

Lead (Pb)-free

IRFR320PbF

IRFU320PbF

SiHFR320-E3

SiHFU320-E3

SnPb

IRFR320

IRFU320

SiHFR320

SiHFU320

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-Source Voltage

400

V

Gate-Source Voltage

± 20

Continuous Drain Current

3.1

A

2.0

12

Linear Derating Factor

0.33

W/°C

0.020

160

mJ

3.1

A

4.2

mJ

Maximum Power Dissipation

42

W

2.5

dV/dt

4.0

V/ns

Operating Junction and Storage Temperature Range

- 55 to + 150

°C

Soldering Recommendations (Peak Temperature)

for 10 s