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IRFU9120PBF Datasheet(PDF) 2 Page - Kersemi Electronic Co., Ltd. |
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IRFU9120PBF Datasheet(HTML) 2 Page - Kersemi Electronic Co., Ltd. |
2 / 7 page www.kersemi.com 2 IRFR9120, IRFU9120, SiHFR9120, SiHFU9120 Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. VDD = - 25 V, starting TJ = 25 °C, L = 10 mH, RG = 25 Ω, IAS = - 5.6 A (see fig. 12). c. ISD ≤ - 6.8 A, dI/dt ≤ 110 A/µs, VDD ≤ VDS, TJ ≤ 150 °C. d. 1.6 mm from case. e. When mounted on 1" square PCB (FR-4 or G-10 material). Note a. When mounted on 1" square PCB (FR-4 or G-10 material). Operating Junction and Storage Temperature Range TJ, Tstg - 55 to + 150 °C Soldering Recommendations (Peak Temperature) for 10 s 260d THERMAL RESISTANCE RATINGS PARAMETER SYMBOL MIN. TYP. MAX. UNIT Maximum Junction-to-Ambient RthJA - - 110 °C/W Maximum Junction-to-Ambient (PCB Mount)a RthJA -- 50 Maximum Junction-to-Case (Drain) RthJC -- 3.0 ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted PARAMETER SYMBOL LIMIT UNIT SPECIFICATIONS TJ = 25 °C, unless otherwise noted PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = - 250 µA - 100 - - V VDS Temperature Coefficient ΔV DS/TJ Reference to 25 °C, ID = - 1 mA - - 0.098 - V/°C Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = - 250 µA - 2.0 - - 4.0 V Gate-Source Leakage IGSS VGS = ± 20 V - - ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = - 100 V, VGS = 0 V - - - 100 µA VDS = - 80 V, VGS = 0 V, TJ = 125 °C - - - 500 Drain-Source On-State Resistance RDS(on) VGS = - 10 V ID = - 3.4 Ab - - 0.60 Ω Forward Transconductance gfs VDS = - 50 V, ID = - 3.4 A 1.5 - - S Dynamic Input Capacitance Ciss VGS = 0 V, VDS = - 25 V, f = 1.0 MHz, see fig. 5 - 390 - pF Output Capacitance Coss - 170 - Reverse Transfer Capacitance Crss -45 - Total Gate Charge Qg VGS = - 10 V ID = - 6.8 A, VDS = - 80 V, see fig. 6 and 13b -- 18 nC Gate-Source Charge Qgs -- 3.0 Gate-Drain Charge Qgd -- 9.0 Turn-On Delay Time td(on) VDD = - 50 V, ID = - 6.8 A, RG = 18 Ω, RD = 7.1 Ω, see fig. 10b -9.6 - ns Rise Time tr -29 - Turn-Off Delay Time td(off) -21 - Fall Time tf -25 - Internal Drain Inductance LD Between lead, 6 mm (0.25") from package and center of die contact -4.5 - nH Internal Source Inductance LS -7.5 - D S G |
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