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PSMN1R6-30PL Datasheet(PDF) 8 Page - NXP Semiconductors |
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PSMN1R6-30PL Datasheet(HTML) 8 Page - NXP Semiconductors |
8 / 13 page PSMN1R6-30PL_2 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 02 — 25 June 2009 8 of 13 NXP Semiconductors PSMN1R6-30PL N-channel 30 V 1.7 m Ω logic level MOSFET Fig 11. Sub-threshold drain current as a function of gate-source voltage Fig 12. Gate-source threshold voltage as a function of junction temperature Fig 13. Normalized drain-source on-state resistance factor as a function of junction temperature Fig 14. Gate charge waveform definitions 003aab271 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 01 23 VGS (V) ID (A) max typ min 003a a c982 0 1 2 3 -60 0 60 120 180 Tj ( °C) VGS(th) (V) max typ min 03aa27 0 0.5 1 1.5 2 −60 0 60 120 180 Tj ( °C) a 003aaa508 VGS VGS(th) QGS1 QGS2 QGD VDS QG(tot) ID QGS VGS(pl) |
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