PBHV8115T215 datasheet(5/13 Pages) NXP

Part #	PBHV8115T215

Description	150 V, 1 A NPN high-voltage low VCEsat (BISS) transistor

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Manufacturer	NXP [NXP Semiconductors]

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PBHV8115T_2

Product data sheet

Rev. 02 — 9 December 2008

5 of 12

NXP Semiconductors

PBHV8115T

150 V, 1 A NPN high-voltage low VCEsat (BISS) transistor

7.

Characteristics

[1]

Pulse test: tp ≤ 300 µs; δ≤ 0.02.

Table 7.

Characteristics

Tamb =25 °C unless otherwise speciﬁed.

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

ICBO

collector-base cut-off

current

VCB = 120 V; IE = 0 A

-

100

nA

VCB = 120 V; IE =0A;

Tj = 150 °C

--10

µA

ICES

collector-emitter cut-off

current

VCE = 120 V; VBE = 0 V

-

100

nA

IEBO

emitter-base cut-off

current

VEB =4V; IC = 0 A

-

100

nA

hFE

DC current gain

VCE =10V

IC = 50 mA

100

250

-

IC = 100 mA

100

250

-

IC = 0.5 A

[1] 50

160

-

IC =1A

[1] 10

30

-

VCEsat

collector-emitter

saturation voltage

IC = 100 mA; IB = 10 mA

-

40

60

mV

IC = 100 mA; IB = 20 mA

-

33

50

mV

IC = 1 A; IB = 200 mA

[1] -

225

350

mV

VBEsat

base-emitter saturation

voltage

IC = 1 A; IB = 200 mA

[1] -

1.1

1.2

V

fT

transition frequency

VCE =10V; IE =10mA;

f = 100 MHz

-

30

-

MHz

Cc

collector capacitance

VCB =20V; IE =ie =0A;

f=1MHz

-

5.7

-

pF

Ce

emitter capacitance

VEB = 0.5 V; IC =ic =0A;

f=1MHz

-

150

-

pF

td

delay time

VCC =6V; IC = 0.5 A;

IBon = 0.1 A; IBoff = −0.1 A

-7

-ns

tr

rise time

-

565

-

ns

ton

turn-on time

-

572

-

ns

ts

storage time

-

1530

-

ns

tf

fall time

-

700

-

ns

toff

turn-off time

-

2230

-

ns

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