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PBHV8115T215 Datasheet(PDF) 5 Page - NXP Semiconductors |
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PBHV8115T215 Datasheet(HTML) 5 Page - NXP Semiconductors |
5 / 13 page PBHV8115T_2 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 02 — 9 December 2008 5 of 12 NXP Semiconductors PBHV8115T 150 V, 1 A NPN high-voltage low VCEsat (BISS) transistor 7. Characteristics [1] Pulse test: tp ≤ 300 µs; δ≤ 0.02. Table 7. Characteristics Tamb =25 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit ICBO collector-base cut-off current VCB = 120 V; IE = 0 A - - 100 nA VCB = 120 V; IE =0A; Tj = 150 °C --10 µA ICES collector-emitter cut-off current VCE = 120 V; VBE = 0 V - - 100 nA IEBO emitter-base cut-off current VEB =4V; IC = 0 A - - 100 nA hFE DC current gain VCE =10V IC = 50 mA 100 250 - IC = 100 mA 100 250 - IC = 0.5 A [1] 50 160 - IC =1A [1] 10 30 - VCEsat collector-emitter saturation voltage IC = 100 mA; IB = 10 mA - 40 60 mV IC = 100 mA; IB = 20 mA - 33 50 mV IC = 1 A; IB = 200 mA [1] - 225 350 mV VBEsat base-emitter saturation voltage IC = 1 A; IB = 200 mA [1] - 1.1 1.2 V fT transition frequency VCE =10V; IE =10mA; f = 100 MHz - 30 - MHz Cc collector capacitance VCB =20V; IE =ie =0A; f=1MHz - 5.7 - pF Ce emitter capacitance VEB = 0.5 V; IC =ic =0A; f=1MHz - 150 - pF td delay time VCC =6V; IC = 0.5 A; IBon = 0.1 A; IBoff = −0.1 A -7 -ns tr rise time - 565 - ns ton turn-on time - 572 - ns ts storage time - 1530 - ns tf fall time - 700 - ns toff turn-off time - 2230 - ns |
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