IPW65R190C6 datasheet(4/19 Pages) INFINEON

Part #	IPW65R190C6

Description	650V CoolMOS C6 Power Transistor

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Manufacturer	INFINEON [Infineon Technologies AG]

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650V CoolMOS™ C6 Power Transistor

IPx65R190C6

Maximum ratings

Final Data Sheet

4

Rev. 2.0, 2011-05-09

2

Maximum ratings

at

T

j = 25 °C, unless otherwise specified.

Table 2

Maximum ratings

Parameter

Symbol

Values

Unit

Note / Test Condition

Min.

Typ.

Max.

Continuous drain current

1)

1) Limited by

T

j,max. Maximum duty cycle D=0.75

I

D

--

20.2

A

T

C= 25 °C

12.8

T

C= 100°C

Pulsed drain current

2)

2) Pulse width

t

p limited by Tj,max

I

D,pulse

--

66

A

T

C=25 °C

Avalanche energy, single pulse

E

AS

--

485

mJ

I

D=3.5 A,VDD=50 V

Avalanche energy, repetitive

E

AR

-

0.73

I

D=3.5 A,VDD=50 V

Avalanche current, repetitive

I

AR

--

3.5

A

MOSFET dv/dt ruggedness

dv/dt

-

50

V/ns

V

DS=0...480 V

Gate source voltage

V

GS

-20

-

20

V

static

-30

30

AC (f>1 Hz)

Power dissipation for

TO-220, TO-247, TO-262, TO-263

P

tot

--

151

W

T

C=25 °C

Power dissipation for

TO-220 FullPAK

P

tot

--

34

Operating and storage temperature

T

j,Tstg

-55

-

150

°C

Mounting torque

TO-220, TO-247

-

60

Ncm

M3 and M3.5 screws

Mounting torque

TO-220 FullPAK

50

M2.5 screws

Continuous diode forward current

I

S

--

17.5

A

T

C=25 °C

Diode pulse current

2)

I

S,pulse

--

66

A

T

C=25 °C

Reverse diode dv/dt

3)

3) Identical low side and high side switch with identical

R

G

dv/dt

-

15

V/ns

V

DS=0...400 V,ISD  ID,

T

j=25 °C

Maximum diode commutation

speed

3)

di

f/dt

500

A/µs

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