BTS 410 E2

Semiconductor Group

6

2003-Oct-01

Truth Table

Input-

Output

Status

level

level

412

B2

410

D2

410

E2/F2

410

G2

410

H2

Normal

operation

L

H

L

H

H

H

H

H

H

H

H

H

H

H

Open load

L

H

13)

H

L

H

H

L

H

L

H

L

L

H

Short circuit

to GND

L

H

L

L

H

L

H

L

H

L

H

H

H

L

Short circuit

L

H

H

H

L

H

H

H

H

L

H

Overtem-

perature

L

H

L

L

L

L

L

L

L

L

L

L

L

L

Under-

voltage

L

H

L

L

H

H

H

H

H

H

Overvoltage

L

H

L

L

L

L

L

L

H

H

H

H

H

H

L = "Low" Level

X = don't care

Z = high impedance, potential depends on external circuit

H = "High" Level

Status signal after the time delay shown in the diagrams (see fig 5. page 12...13)

13

) Power Transistor off, high impedance, versions BTS 410H, BTS 412B: internal pull up current source for

open load detection.

14

) Low resistance short V

15

) No current sink capability during undervoltage shutdown

Terms

PROFET

V

IN

ST

OUT

GND

bb

VST

V

IN

IST

IIN

V

bb

Ibb

IL

VOUT

IGND

VON

1

2

4

3

5

R

GND

Input circuit (ESD protection)

IN

GND

I

R

ZD

ZD

I

I

I1

I2

ESD-

voltage clamp at DC conditions. Operation in this mode

may result in a drift of the zener voltage (increase of up

to 1 V).