Electronic Components Datasheet Search
  English  ▼
ALLDATASHEET.COM

X  

UPA801T Datasheet(PDF) 4 Page - Renesas Technology Corp

Part # UPA801T
Description  HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR
Download  8 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

UPA801T Datasheet(HTML) 4 Page - Renesas Technology Corp

  UPA801T Datasheet HTML 1Page - Renesas Technology Corp UPA801T Datasheet HTML 2Page - Renesas Technology Corp UPA801T Datasheet HTML 3Page - Renesas Technology Corp UPA801T Datasheet HTML 4Page - Renesas Technology Corp UPA801T Datasheet HTML 5Page - Renesas Technology Corp UPA801T Datasheet HTML 6Page - Renesas Technology Corp UPA801T Datasheet HTML 7Page - Renesas Technology Corp UPA801T Datasheet HTML 8Page - Renesas Technology Corp  
Zoom Inzoom in Zoom Outzoom out
 4 / 8 page
background image
µPA801T
2
ELECTRICAL CHARACTERISTICS (TA = 25
°C)
PARAMETER
SYMBOL
CONDITION
MIN.
TYP.
MAX.
UNIT
Collector Cutoff Current
ICBO
VCB = 10 V, IE = 0
1
µA
Emitter Cutoff Current
IEBO
VEB = 1 V, IC = 0
1
µA
DC Current Gain
hFE
VCE = 3 V, IC = 7 mANote 1
70
250
Gain Bandwidth Product
fT
VCE = 3 V, IC = 7 mA
3.0
4.5
GHz
Feed-back Capacitance
Cre
VCB = 3 V, IE = 0, f = 1 MHzNote 2
0.7
1.5
pF
Insertion Power Gain
|S21|2
VCE = 3 V, IC = 7 mA, f = 1 GHz
7
9
dB
Noise Figure
NF
VCE = 3 V, IC = 7 mA, f = 1 GHz
1.2
2.5
dB
hFE Ratio
hFE1/hFE2
VCE = 3 V, IC = 7 mA
0.85
A smaller value among
hFE of hFE1 = Q1, Q2
A larger value among
hFE of hFE2 = Q1, Q2
Notes 1. Pulse Measurement: Pw
≤ 350
µs, Duty cycle ≤ 2 %
2. Measured with 3-pin bridge, emitter and case should be connected to guard pin of bridge.
hFE CLASSIFICATION
Rank
FB
GB
Marking
R24
R25
hFE Value
70 to 140
125 to 250
TYPICAL CHARACTERISTICS (TA = 25
°C)
200
100
0
50
100
150
Ambient Temperature TA (°C)
PT – TA Characteristics
20
10
0
0.5
1.0
VCE = 3 V
Base to Emitter Voltage VBE (V)
IC – VBE Characteristics
25
20
15
10
5
0
510
IC – VCE Characteristics
Collector to Emitter Voltage VCE (V)
Collector Current IC (mA)
200
100
50
20
10
0.5
1
5
10
50
VCE = 3 V
hFE – IC Characteristics
80 A
40 A
20 A
60 A
2 Elements
in
Total
Per
Element
IB =160 A
µ
140 A
µ
120 A
µ
100 A
µ
µ
µ
µ
µ


Similar Part No. - UPA801T

ManufacturerPart #DatasheetDescription
logo
NEC
UPA801T NEC-UPA801T Datasheet
76Kb / 12P
   NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC5006 FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD
logo
California Eastern Labs
UPA801T CEL-UPA801T Datasheet
177Kb / 8P
   NPN SILICON HIGH FREQUENCY
UPA801T CEL-UPA801T Datasheet
19Kb / 2P
   NONLINEAR MODEL
logo
Inchange Semiconductor ...
UPA801T ISC-UPA801T Datasheet
197Kb / 2P
   isc Silicon NPN RF Transistor
logo
California Eastern Labs
UPA801T-T1-A CEL-UPA801T-T1-A Datasheet
177Kb / 8P
   NPN SILICON HIGH FREQUENCY
More results

Similar Description - UPA801T

ManufacturerPart #DatasheetDescription
logo
NEC
2SC2570A NEC-2SC2570A Datasheet
119Kb / 8P
   HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR
logo
Renesas Technology Corp
UPA800T RENESAS-UPA800T Datasheet
211Kb / 8P
   HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR
UPA810T RENESAS-UPA810T Datasheet
223Kb / 8P
   HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR
logo
NEC
2SC3355 NEC-2SC3355 Datasheet
102Kb / 8P
   HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR
logo
Renesas Technology Corp
UPA802T RENESAS-UPA802T Datasheet
216Kb / 8P
   HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR
UPA811T RENESAS-UPA811T Datasheet
219Kb / 8P
   HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR
logo
Sanyo Semicon Device
MCH4020 SANYO-MCH4020_12 Datasheet
470Kb / 11P
   NPN Epitaxial Planar Silicon Transistor High Frequency Low-Noise Amplifier
MCH4021 SANYO-MCH4021 Datasheet
276Kb / 9P
   NPN Epitaxial Planar Silicon Transistor High Frequency Low-Noise Amplifier
logo
Renesas Technology Corp
2SC5593 RENESAS-2SC5593 Datasheet
176Kb / 10P
   Silicon NPN Epitaxial High Frequency Low Noise Amplifier
logo
Hitachi Semiconductor
2SC5594 HITACHI-2SC5594 Datasheet
53Kb / 8P
   Silicon NPN Epitaxial High Frequency Low Noise Amplifier
More results


Html Pages

1 2 3 4 5 6 7 8


Datasheet Download

Go To PDF Page


Link URL




Privacy Policy
ALLDATASHEET.COM
Does ALLDATASHEET help your business so far?  [ DONATE ] 

About Alldatasheet   |   Advertisement   |   Datasheet Upload   |   Contact us   |   Privacy Policy   |   Link Exchange   |   Manufacturer List
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com