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BFR193E6327 Datasheet(PDF) 1 Page - Infineon Technologies AG |
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BFR193E6327 Datasheet(HTML) 1 Page - Infineon Technologies AG |
1 / 6 page 2012-08-09 1 BFR193 1 2 3 NPN Bipolar RF Transistor • For low noise, high-gain amplifiers up to 2 GHz • For linear broadband amplifiers • fT = 8 GHz, NFmin = 1 dB at 900 MHz • Pb-free (RoHS compliant) package • Qualification report according to AEC-Q101 available ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type Marking Pin Configuration Package BFR193 RCs 1 = B 2 = E 3 = C SOT23 Maximum Ratings at TA = 25 °C, unless otherwise specified Parameter Symbol Value Unit Collector-emitter voltage VCEO 12 V Collector-emitter voltage VCES 20 Collector-base voltage VCBO 20 Emitter-base voltage VEBO 2 Collector current IC 80 mA Base current IB 10 Total power dissipation1) TS ≤ 69°C Ptot 580 mW Junction temperature TJ 150 °C Storage temperature TStg -55 ... 150 Thermal Resistance Parameter Symbol Value Unit Junction - soldering point2) RthJS 140 K/W 1TS is measured on the collector lead at the soldering point to the pcb 2For calculation of RthJA please refer to Application Note AN077 (Thermal Resistance Calculation) |
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