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BFR193E6327 Datasheet(PDF) 1 Page - Infineon Technologies AG

Part # BFR193E6327
Description  NPN Bipolar RF Transistor
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Manufacturer  INFINEON [Infineon Technologies AG]
Direct Link  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

BFR193E6327 Datasheet(HTML) 1 Page - Infineon Technologies AG

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2012-08-09
1
BFR193
1
2
3
NPN Bipolar RF Transistor
• For low noise, high-gain amplifiers up to 2 GHz
• For linear broadband amplifiers
• fT = 8 GHz, NFmin = 1 dB at 900 MHz
• Pb-free (RoHS compliant) package
• Qualification report according to AEC-Q101 available
ESD
(Electrostatic discharge) sensitive device, observe handling precaution!
Type
Marking
Pin Configuration
Package
BFR193
RCs
1 = B
2 = E
3 = C
SOT23
Maximum Ratings
at TA = 25 °C, unless otherwise specified
Parameter
Symbol
Value
Unit
Collector-emitter voltage
VCEO
12
V
Collector-emitter voltage
VCES
20
Collector-base voltage
VCBO
20
Emitter-base voltage
VEBO
2
Collector current
IC
80
mA
Base current
IB
10
Total power dissipation1)
TS ≤ 69°C
Ptot
580
mW
Junction temperature
TJ
150
°C
Storage temperature
TStg
-55 ... 150
Thermal Resistance
Parameter
Symbol
Value
Unit
Junction - soldering point2)
RthJS
140
K/W
1TS is measured on the collector lead at the soldering point to the pcb
2For calculation of RthJA please refer to Application Note AN077 (Thermal Resistance Calculation)


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