Symbol

Parameter

Conditions

Type

Min

Typ

Max

Units

t

D(ON)

Turn - On Delay Time

V

V

ALL

10

20

nS

t

r

Turn - On Rise Time

ALL

63

100

nS

t

D(OFF)

Turn - Off Delay Time

ALL

49

80

nS

t

f

Turn - Off Fall Time

ALL

45

75

nS

Q

g

Total Gate Charge

V

I

ALL

22.5

30

nC

Q

gs

Gate-Source Charge

ALL

4.5

nC

Q

gd

Gate-Drain Charge

ALL

10.5

nC

DRAIN-SOURCE DIODE CHARACTERISTICS

I

S

Maximum Continuos Drain-Source Diode Forward Current

NDP510A

NDP510AE

NDB510A

NDB510AE

15

A

NDP510B

NDP510BE

NDB510B

NDB510BE

13

A

I

SM

Maximum Pulsed Drain-Source Diode Forward Current

NDP510A

NDP510AE

NDB510A

NDB510AE

60

A

NDP510B

NDP510BE

NDB510B

NDB510BE

52

A

V

SD

(Note 2)

Drain-Source Diode Forward

Voltage

V

I

ALL

0.89

1.3

V

T

0.85

1.2

V

t

rr

Reverse Recovery Time

V

dI

ALL

98

140

ns

I

rr

Reverse Recovery Current

ALL

6.8

10

A

THERMAL CHARACTERISTICS

Thermal Resistance, Junction-to-Case

ALL

2

°C/W

Thermal Resistance, Junction-to-Ambient

ALL

62.5

°C/W

Notes:

1. NDP510A/510B and NDB510A/510B are not rated for operation in avalanche mode.

2. Pulse Test: Pulse Width < 300

µs, Duty Cycle < 2.0%.

NDP510.SAM