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NDP508B Datasheet(PDF) 5 Page - Fairchild Semiconductor |
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NDP508B Datasheet(HTML) 5 Page - Fairchild Semiconductor |
5 / 6 page NDP508.SAM -50 -25 0 25 50 75 100 125 150 175 0.9 0.95 1 1.05 1.1 1.15 T , JUNCTION TEMPERATURE (°C) I = 250µA J D 0.2 0.4 0.6 0.8 1 1.2 1.4 0.01 0.1 1 5 10 30 50 V , BODY DIODE FORWARD VOLTAGE (V) V = 0V GS T = 125°C J 25°C -55°C SD 0 10 20 30 40 0 5 10 15 20 Q , GATE CHARGE (nC) g I = 19A D V = 12V DS 64 24 1 2 3 5 10 20 50 40 100 200 500 1000 1600 V , DRAIN TO SOURCE VOLTAGE (V) DS C iss f = 1 MHz V = 0V GS C oss C rss G D S VDD R L V V IN OUT V GS DUT R GEN 10% 50% 90% 10% 90% 90% 50% Input, Vin Output, Vout t on toff td(off) t f tr t d(on) Inverted 10% Pulse Width Figure 7. Breakdown Voltage Variation with Temperature. Figure 8. Body Diode Forward Voltage Variation with Current and Temperature. Figure 9. Capacitance Characteristics. Figure 10. Gate Charge Characteristics. Figure 11. Switching Test Circuit. Figure 12. Switching Waveforms. Typical Electrical Characteristics (continued) |
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