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NDP408AE Datasheet(PDF) 6 Page - Fairchild Semiconductor |
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NDP408AE Datasheet(HTML) 6 Page - Fairchild Semiconductor |
6 / 6 page NDP408.SAM 0 2 4 6 8 10 0 2 4 6 8 I , DRAIN CURRENT (A) T = -55°C J 25°C D V = 10V DS 125°C t p t p V = 10V GS L + - VDD VDD BVDSS I L t is adjusted to reach the desired peak inductive current, I . p L 1 2 3 5 10 20 80 150 0.5 1 2 5 10 20 50 V , DRAIN-SOURCE VOLTAGE (V) V = 20V SINGLE PULSE T = 25°C C RDS(ON) Limit 100µs 1ms 10ms DC 10µs DS GS Figure 13. Transconductance Variation with Drain Current and Temperature. Figure 14. Unclamped Inductive Load Circuit and Waveforms. Figure 15. Maximum Safe Operating Area. Figure 16. Transient Thermal Response Curve. Typical Electrical Characteristics (continued) 0.01 0.02 0.05 0.1 0.2 0.5 1 2 5 10 20 50 100 200 500 1000 0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1 t ,TIME (ms) Single Pulse D = 0.5 0.1 0.05 0.02 0.2 Duty Cycle, D = t /t 1 2 R (t) = r(t) * R R = 3.0 °C/W θJC θJC θJC T - T = P * R (t) θJC C J P(pk) t1 t 2 1 0.01 |
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