NDB4060 datasheet(2/6 Pages) FAIRCHILD

Part #	NDB4060

Description	N-Channel Enhancement Mode Field Effect Transistor

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Manufacturer	FAIRCHILD [Fairchild Semiconductor]

Direct Link	http://www.fairchildsemi.com

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2 / 6 page

Electrical Characteristics (T

C = 25°C unless otherwise noted)

Symbol

Parameter

Conditions

Min

Typ

Max

Units

DRAIN-SOURCE AVALANCHE RATINGS (Note 1)

W

DSS

Single Pulse Drain-Source Avalanche

Energy

V

DD = 25 V, ID = 15 A

40

mJ

I

AR

Maximum Drain-Source Avalanche Current

15

A

OFF CHARACTERISTICS

BV

DSS

Drain-Source Breakdown Voltage

V

GS = 0 V, ID = 250 µA

60

V

I

DSS

Zero Gate Voltage Drain Current

V

DS = 60 V, VGS = 0 V

250

µA

T

J = 125°C

1

mA

I

GSSF

Gate - Body Leakage, Forward

V

GS = 20 V, VDS = 0 V

100

nA

I

GSSR

Gate - Body Leakage, Reverse

V

GS = -20 V, VDS= 0 V

-100

nA

ON CHARACTERISTICS (Note 1)

V

GS(th)

Gate Threshold Voltage

V

DS = VGS, ID = 250 µA

2

3

4

V

T

J = 125°C

1.4

2.4

3.6

R

DS(ON)

Static Drain-Source On-Resistance

V

GS = 10 V, ID = 7.5 A

0.078

0.1

Ω

T

J = 125°C

0.12

0.165

I

D(on)

On-State Drain Current

V

GS = 10 V, VDS = 10 V

15

A

g

FS

Forward Transconductance

V

DS = 10 V, ID = 7.5 A

3

5.7

S

DYNAMIC CHARACTERISTICS

C

iss

Input Capacitance

V

DS = 25, VGS = 0 V,

f = 1.0 MHz

370

450

pF

C

oss

Output Capacitance

165

200

pF

C

rss

Reverse Transfer Capacitance

50

100

pF

SWITCHING CHARACTERISTICS (Note 1)

t

D(on)

Turn - On Delay Time

V

DD = 30 V, ID = 15 A

V

GS = 10 V, RGEN = 25 Ω

8

20

ns

t

r

Turn - On Rise Time

70

100

ns

t

D(off)

Turn - Off Delay Time

18

30

ns

t

f

Turn - Off Fall Time

37

50

ns

Q

g

Total Gate Charge

V

DS = 48 V

I

D = 15 A, VGS = 10 V

12.7

17

nC

Q

gs

Gate-Source Charge

3.2

nC

Q

gd

Gate-Drain Charge

7

nC

NDP4060 Rev. C

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