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2SC5707 Datasheet(PDF) 2 Page - Sanyo Semicon Device |
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2SC5707 Datasheet(HTML) 2 Page - Sanyo Semicon Device |
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2 / 10 page  2SA2040/2SC5707 No.6913-2/10 Continued from preceding page. Parameter Symbol Conditions Ratings Unit Base Current IB (--)2 A Collector Dissipation PC 1.0 W Tc=25°C15 W Junction Temperature Tj 150 °C Storage Temperature Tstg --55 to +150 °C Electrical Characteristics at Ta=25°C Parameter Symbol Conditions Ratings Unit min typ max Collector Cutoff Current ICBO VCB=(--)40V, IE=0A (--)0.1 μA Emitter Cutoff Current IEBO VEB=(--)4V, IC=0A (--)0.1 μA DC Current Gain hFE VCE=(--)2V, IC=(--)500mA 200 560 Gain-Bandwidth Product fT VCE=(--)10V, IC=(--)500mA (290)330 MHz Output Capacitance Cob VCB=(--)10V, f=1MHz (50)28 pF Collector-to-Emitter Saturation Voltage VCE(sat)1 IC=(--)3.5A, IB=(--)175mA (--230)160 (--390)240 mV VCE(sat)2 IC=(--)2A, IB=(--)40mA (--240)110 (--400)170 mV Base-to-Emitter Saturation Voltage VBE(sat) IC=(--)2A, IB=(--)40mA (--)0.83 (--)1.2 V Collector-to-Base Breakdown Voltage V(BR)CBO IC=(--)10μA, IE=0A (--50)100 V Collector-to-Emitter Breakdown Voltage V(BR)CES IC=(--)100μA, RBE=0Ω (--50)100 V Collector-to-Emitter Breakdown Voltage V(BR)CEO IC=(--)1mA, RBE=∞ (--)50 V Emitter-to-Base Breakdown Voltage V(BR)EBO IE=(--)10μA, IC=0A (--)6 V Turn-On Time ton See specified Test Circuit. (40)30 ns Storage Time tstg (225)420 ns Fall Time tf 25 ns Switching Time Test Circuit Ordering Information Device Package Shipping memo 2SA2040-E TP 500pcs./bag Pb Free 2SC5707-E TP 500pcs./bag 2SA2040-TL-E TP-FA 700pcs./reel 2SC5707-TL-E TP-FA 700pcs./reel + + 50Ω INPUT OUTPUT VR RB RL VCC=25V 100μF 470μF VBE= --5V PW=20μs IB1 IB2 D.C.≤1% 20IB1= --20IB2=IC=2.5A For PNP, the polarity is reversed. |
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Similar Description - 2SC5707 |
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