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BQ24170RGYR Datasheet(PDF) 10 Page - Texas Instruments |
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BQ24170RGYR Datasheet(HTML) 10 Page - Texas Instruments |
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10 / 40 page  bq24170 bq24172 SLUSAD2B – NOVEMBER 2010 – REVISED APRIL 2011 www.ti.com ELECTRICAL CHARACTERISTICS (continued) 4.5V ≤ V(PVCC, AVCC) ≤ 17V, –40°C < TJ + 125°C, typical values are at TA = 25°C, with respect to AGND (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX UNITS CHARGE TERMINATION KTERM Termination current set factor Percentage of fast charge current 10%(3) VSRP-SRN = 4 mV –25% 25% Termination current regulation accuracy VSRP-SRN = 2 mV –40% 40% tTERM_DEG Deglitch time for termination (both edges) 100 ms tQUAL Termination qualification time VSRN > VRECH and ICHG < ITERM 250 ms IQUAL Termination qualification current Discharge current once termination is detected 2 mA INPUT UNDER-VOLTAGE LOCK-OUT COMPARATOR (UVLO) VUVLO AC under-voltage rising threshold Measure on AVCC 3.4 3.6 3.8 V VUVLO_HYS AC under-voltage hysteresis, falling Measure on AVCC 300 mV SLEEP COMPARATOR (REVERSE DISCHARGING PROTECTION) VSLEEP SLEEP mode threshold VAVCC – VSRN falling 50 90 150 mV VSLEEP_HYS SLEEP mode hysteresis VAVCC – VSRN rising 200 mV tSLEEP_FALL_CD SLEEP deglitch to disable charge VAVCC – VSRN falling 1 ms tSLEEP_FALL_FETOFF SLEEP deglitch to turn off input FETs VAVCC – VSRN falling 5 ms Deglitch to enter SLEEP mode, disable tSLEEP_FALL VAVCC – VSRN falling 100 ms VREF and enter low quiescent mode Deglitch to exit SLEEP mode, and enable tSLEEP_PWRUP VAVCC – VSRN rising 30 ms VREF ACN-SRN COMPARATOR VACN-SRN Threshold to turn on BATFET VACN-SRN falling 150 220 300 mV VACN-SRN_HYS Hysteresis to turn off BATFET VACN-SRN rising 100 mV tBATFETOFF_DEG Deglitch to turn on BATFET VACN-SRN falling 2 ms tBATFETON_DEG Deglitch to turn off BATFET VACN-SRN rising 50 µs BAT LOWV COMPARATOR bq24170, CELL to AGND, 1 cell, measure on 2.87 2.9 2.93 SRN bq24170, CELL floating, 2 cells, measure on 5.74 5.8 5.86 SRN VLOWV Precharge to fast charge transition V bq24170, CELL to VREF, 3 cells, measure on 8.61 8.7 8.79 SRN bq24172, measure on FB 1.43 1.45 1.47 bq24170, CELL to AGND, 1 cell, measure on 200 SRN bq24170, CELL floating, 2 cells, measure on 400 SRN VLOWV_HYS Fast charge to precharge hysteresis mV bq24170, CELL to VREF, 3 cells, measure on 600 SRN bq24172, measure on FB 100 tpre2fas VLOWV rising deglitch Delay to start fast charge current 25 ms tfast2pre VLOWV falling deglitch Delay to start precharge current 25 ms RECHARGE COMPARATOR bq24170, CELL to AGND, 1 cell, measure on 70 100 130 SRN bq24170, CELL floating, 2 cells, measure on Recharge Threshold, below regulation 140 200 260 SRN VRECHG voltage limit, VBAT_REG-VSRN (bq24170), or mV VFB_REG-VFB (bq24172) bq24170, CELL to VREF, 3 cells, measure on 210 300 390 SRN bq24172, measure on FB 35 50 65 tRECH_RISE_DEG VRECHG rising deglitch VFB decreasing below VRECHG 10 ms tRECH_FALL_DEG VRECHG falling deglitch VFB increasing above VRECHG 10 ms (3) The minimum current is 120 mA on 10m Ω sense resistor. 10 Submit Documentation Feedback Copyright © 2010–2011, Texas Instruments Incorporated Product Folder Link(s): bq24170 bq24172 |
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