2SC5606-A datasheet(5/9 Pages) RENESAS

Part #	2SC5606-A

Description	NPN SILICON RF TRANSISTOR FOR LOW NOISE HIGH-GAIN AMPLIFICATION

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Data Sheet PU10781EJ01V0DS

3

2SC5606

TYPICAL CHARACTERISTICS (Unless otherwise specified, TA = +25

°C)

Mounted on Glass Epoxy Board

(1.08 cm

2

× 1.0 mm (t) )

200

150

115

100

50

0

25

0

50

75

100

125

150

Ambient Temperature TA (

°C)

TOTAL POWER DISSIPATION

vs. AMBIENT TEMPERATURE

f = 1 MHz

1.0

0.1

1.0

0.1

10.0

100.0

Collector to Base Voltage VCB (V)

REVERSE TRANSFER CAPACITANCE

vs. COLLECTOR TO BASE VOLTAGE

650 A

μ

IB 100 A step

μ

IB = 50 A

μ

250 A

μ

450 A

μ

40

30

20

10

0

12

3

04

Collector to Emitter Voltage VCE (V)

COLLECTOR CURRENT vs.

COLLECTOR TO EMITTER VOLTAGE

Collector Current IC (mA)

DC CURRENT GAIN vs.

COLLECTOR CURRENT

Base to Emitter Voltage VBE (V)

50

40

30

20

10

0

0.2

0.4

0.6

0.8

1.0

1.2

VCE = 2 V

COLLECTOR CURRENT vs.

BASE TO EMITTER VOLTAGE

1 000

100

10

0.1

10.0

1.0

100.0

VCE = 2 V

Remark The graphs indicate nominal characteristics.

<R>

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2SC5606-A Datasheet(PDF) 5 Page - Renesas Technology Corp

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