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ADG823BRM Datasheet(PDF) 3 Page - Analog Devices |
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ADG823BRM Datasheet(HTML) 3 Page - Analog Devices |
3 / 12 page ADG821/ADG822/ADG823 Rev. A | Page 3 of 12 SPECIFICATIONS VDD = 5 V ± 10%, GND = 0 V; TA = −40°C to +125°C, unless otherwise noted. Table 1. Parameter 25°C −40°C to +85°C −40°C to +125°C1 Unit Test Conditions/Comments ANALOG SWITCH Analog Signal Range 0 V to VDD V On Resistance (RON) 0.5 Ω typ VS = 0 V to VDD, IS = 100 mA, see Figure 17 0.6 0.7 0.8 Ω max On Resistance Match Between 0.16 Ω typ VS = 0 V to VDD, IS = 100 mA Channels (ΔRON) 0.2 0.25 0.28 Ω max On Resistance Flatness (RFLAT(ON)) 0.15 Ω typ VS = 0 V to VDD, IS = 100 mA 0.23 0.26 0.3 Ω max LEAKAGE CURRENTS VDD = 5.5 V Source Off Leakage, IS (Off ) ±0.01 nA typ VS = 4.5 V/1 V, VD = 1 V/4.5 V, see Figure 18 ±0.25 ±3 ±25 nA max Drain Off Leakage, ID (Off ) ±0.01 nA typ VS = 4.5 V/1 V, VD = 1 V/4.5 V, see Figure 18 ±0.25 ±3 ±25 nA max Channel On Leakage, ID, IS (On) ±0.01 nA typ VS = VD = 1 V, or VS = VD = 4.5 V, see Figure 19 ±0.25 ±3 ±25 nA max DIGITAL INPUTS Input High Voltage, VINH 2.0 V min Input Low Voltage, VINL 0.8 V max Input Current IINL or IINH 0.005 μA typ VIN = VINL or VINH ±0.1 μA max Digital Input Capacitance, CIN 4 pF typ DYNAMIC CHARACTERISTICS2 tON 33 ns typ RL = 50 Ω, CL = 35 pF, VS = 3 V, see Figure 20 45 48 52 ns max tOFF 11 ns typ RL = 50 Ω, CL = 35 pF, VS = 3 V, see Figure 20 16 19 21 ns max Break-Before-Make Time Delay, tBBM 32 ns typ RL = 50 Ω, CL = 35 pF, VS1 = VS2 = 3 V, (ADG823 Only) 1 ns min see Figure 21 Charge Injection 15 pC typ VS = 2.5 V; RS = 0 Ω, CL = 1 nF, see Figure 22 Off Isolation −52 dB typ RL = 50 Ω, CL = 5 pF, f = 1 MHz, see Figure 23 Channel-to-Channel Crosstalk −82 dB typ RL = 50 Ω, CL = 5 pF, f = 1 MHz, see Figure 24 Bandwidth −3 dB 24 MHz typ RL = 50 Ω, CL = 5 pF, see Figure 25 CS (Off ) 85 pF typ f = 1 MHz CD (Off ) 98 pF typ f = 1 MHz CD, CS (On) 230 pF typ f = 1 MHz POWER REQUIREMENTS VDD = 5.5 V, digital inputs = 0 V or 5.5 V IDD 0.001 μA typ 1.0 2.0 μA max 1 On resistance parameters tested with IS = 10 mA. 2 Guaranteed by design, not subject to production test. |
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