NXP Semiconductors

PMXB350UPE

20 V, P-channel Trench MOSFET

PMXB350UPE

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Product data sheet

19 September 2013

8 / 15

0

-5

-4

-2

-3

-1

aaa-009335

-4

-6

-2

-8

-10

(A)

0

Fig. 11. Transfer characteristics: drain current as a

function of gate-source voltage; typical values

-60

180

120

0

60

aaa-009336

1.0

0.5

1.5

2.0

a

0

Fig. 12. Normalized drain-source on-state resistance

as a function of junction temperature; typical

values

-60

180

120

0

60

aaa-009276

-0.5

-1.0

-1.5

(V)

0

max

typ

min

Fig. 13. Gate-source threshold voltage as a function of

junction temperature

-10

-1

aaa-009277

10

C

(pF)

1

Fig. 14. Input, output and reverse transfer capacitances

as a function of drain-source voltage; typical

values