NXP Semiconductors

PMDXB600UNE

20 V, dual N-channel Trench MOSFET

PMDXB600UNE

All information provided in this document is subject to legal disclaimers.

© NXP N.V. 2013. All rights reserved

Product data sheet

16 September 2013

9 / 15

0

0.5

0.4

0.2

0.3

0.1

aaa-009006

2

3

1

4

5

(V)

0

Fig. 15. Gate-source voltage as a function of gate

charge; typical values

017aaa137

Fig. 16. MOSFET transistor: Gate charge waveform

definitions

0

2.0

1.6

0.8

1.2

0.4

aaa-009007

1.0

1.5

0.5

2.0

2.5

(A)

0

Fig. 17. Source current as a function of source-drain voltage; typical values

11. Test information

P

t

006aaa812

duty cycle δ =

Fig. 18. Duty cycle definition