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PMDXB600UNE Datasheet(PDF) 9 Page - NXP Semiconductors |
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PMDXB600UNE Datasheet(HTML) 9 Page - NXP Semiconductors |
9 / 15 page NXP Semiconductors PMDXB600UNE 20 V, dual N-channel Trench MOSFET PMDXB600UNE All information provided in this document is subject to legal disclaimers. © NXP N.V. 2013. All rights reserved Product data sheet 16 September 2013 9 / 15 QG (nC) 0 0.5 0.4 0.2 0.3 0.1 aaa-009006 2 3 1 4 5 VGS (V) 0 ID = 0.6 A; VDS = 10 V; Tamb = 25 °C Fig. 15. Gate-source voltage as a function of gate charge; typical values 017aaa137 VGS VGS(th) QGS1 QGS2 QGD VDS QG(tot) ID QGS VGS(pl) Fig. 16. MOSFET transistor: Gate charge waveform definitions VSD (V) 0 2.0 1.6 0.8 1.2 0.4 aaa-009007 1.0 1.5 0.5 2.0 2.5 IS (A) 0 Tj = 150 °C Tj = 25 °C VGS = 0 V Fig. 17. Source current as a function of source-drain voltage; typical values 11. Test information t1 t2 P t 006aaa812 duty cycle δ = t1 t2 Fig. 18. Duty cycle definition |
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