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PBSS5260QA Datasheet(PDF) 11 Page - NXP Semiconductors |
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PBSS5260QA Datasheet(HTML) 11 Page - NXP Semiconductors |
11 / 17 page NXP Semiconductors PBSS5260QA 60 V, 1.7 A PNP low VCEsat (BISS) transistor PBSS5260QA All information provided in this document is subject to legal disclaimers. © NXP N.V. 2013. All rights reserved Product data sheet 28 August 2013 11 / 17 11. Test information 006aaa266 - IBon (100 %) - IB input pulse (idealized waveform) - IBoff 90 % 10 % - IC (100 %) - IC td ton 90 % 10 % tr output pulse (idealized waveform) tf t ts toff Fig. 16. BISS transistor switching time definition RC R2 R1 DUT mgd624 Vo RB (probe) 450 Ω (probe) 450 Ω oscilloscope oscilloscope VBB VI VCC Fig. 17. Test circuit for switching times 11.1 Quality information This product has been qualified in accordance with the Automotive Electronics Council (AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in automotive applications. |
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