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NESG2021M05-T1 Datasheet(PDF) 1 Page - Renesas Technology Corp |
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NESG2021M05-T1 Datasheet(HTML) 1 Page - Renesas Technology Corp |
1 / 14 page R09DS0034EJ0300 Rev. 3.00 Page 1 of 12 Jun 20, 2012 The mark <R> shows major revised points. The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field. Data Sheet NESG2021M05 NPN SiGe RF Transistor for Low Noise, High-Gain Amplification Flat-Lead 4-Pin Thin-Type Super Minimold (M05) FEATURES • This device is an ideal choice for low noise, high-gain at low current amplifications. ⎯ NF = 0.9 dB TYP., G a = 18.0 dB TYP. @ VCE = 2 V, IC = 3 mA, f = 2 GHz ⎯ NF = 1.3 dB TYP., G a = 10.0 dB TYP. @ VCE = 2 V, IC = 3 mA, f = 5.2 GHz • Maximum stable power gain: MSG = 22.5 dB TYP. @ V CE = 3 V, IC = 10 mA, f = 2 GHz • High breakdown voltage technology for SiGe Tr. adopted: V CEO (absolute maximum ratings) = 5.0 V • Flat-lead 4-pin thin-type super minimold (M05) package ORDERING INFORMATION Part Number Order Number Package Quantity Supplying Form NESG2021M05 NESG2021M05-A 50 pcs (Non reel) NESG2021M05-T1 NESG2021M05-T1-A Flat-lead 4-pin thin- type supper minimold (M05, 2012 PKG) (Pb-Free) 3 kpcs/reel • 8 mm wide embossed taping • Pin 3 (Collector), Pin 4 (Emitter) face the perforation side of the tape Remark To order evaluation samples, please contact your nearby sales office. Unit sample quantity is 50 pcs. ABSOLUTE MAXIMUM RATINGS (TA = +25°C) Parameter Symbol Ratings Unit Collector to Base Voltage VCBO 13.0 V Collector to Emitter Voltage VCEO 5.0 V Emitter to Base Voltage VEBO 1.5 V Collector Current IC 35 mA Total Power Dissipation Ptot Note 175 mW Junction Temperature Tj 150 °C Storage Temperature Tstg −65 to +150 °C Note: Mounted on 1.08 cm 2 × 1.0 mm (t) glass epoxy PCB CAUTION Observe precautions when handling because these devices are sensitive to electrostatic discharge. R09DS0034EJ0300 Rev. 3.00 Jun 20, 2012 <R> |
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