R09DS0040EJ0300 Rev.3.00

Page 1 of 15

Mar 12, 2013

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Data Sheet

NE5550779A

Silicon Power LDMOS FET

FEATURES

• High Output Power

• High power added efficiency

• High Linear gain

• High ESD tolerance

• Suitable for VHF to UHF-BAND Class-AB power amplifier.

APPLICATIONS

• 150 MHz Band Radio System

• 460 MHz Band Radio System

• 900 MHz Band Radio System

ORDERING INFORMATION

Part Number

Order Number

Package

Marking

Supplying Form

NE5550779A

NE5550779A-A

79A

(Pb-Free)

W8

NE5550779A-T1

NE5550779A-T1-A

NE5550779A-T1A NE5550779A-T1A-A

Remark To order evaluation samples, please contact your nearby sales office.

Part number for sample order: NE5550779A

°C, unless otherwise specified)

Operation in excess of any one of these parameters may result in permanent damage.

Parameter

Symbol

Ratings

Unit

Drain to Source Voltage

30

V

Gate to Source Voltage

6.0

V

Drain Current

2.1

A

Drain Current

(50% Duty Pulsed)

4.2

A

Total Power Dissipation

Note

17.8

W

Channel Temperature

150

°C

Storage Temperature

−55 to +150

°C

°C

CAUTION

Observe precautions when handling because these devices are sensitive to electrostatic discharge.

R09DS0040EJ0300

Rev.3.00

Mar 12, 2013